Passivation of a Si(100) surface by S from solution

M. Yusuf Ali, Meng Tao

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

A wet-chemical process has been developed to passivate the Si(100) surface with sulfur (S) in an aqueous solution. The solution contains an etchant for SiO2, ammonium hydroxide [NH4 OH] and a passivant for the surface, ammonium sulfide [(NH4) 2 S]. The compatibility of the etchant with the passivant allows SiO2, native or thermal, to be removed in situ from the surface. A fresh and clean Si(100) surface is exposed right before it is passivated by S. Schottky barrier heights of Al on S-passivated n- and p-type Si(100) show a greater sensitivity to Al work function and Si electron affinity, suggesting good-quality passivation.

Original languageEnglish (US)
Pages (from-to)317-320
Number of pages4
JournalElectrochemical and Solid-State Letters
Volume10
Issue number11
DOIs
StatePublished - Jan 1 2007
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Passivation of a Si(100) surface by S from solution'. Together they form a unique fingerprint.

  • Cite this