Passivated emitters in silicon solar cells

Richard King, Peter E. Gruenbaum, Ronald A. Sinton, Richard M. Swanson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, Jo, of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration is extracted. The lowest observed values of Jo which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data were applied to two types of backside-contact solar cells with large area (37.5 cm2) and one-sun efficiencies up to 22.7%.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages227-232
Number of pages6
Volume1
StatePublished - May 1990
Externally publishedYes
EventTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA
Duration: May 21 1990May 25 1990

Other

OtherTwenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
CityKissimimee, FL, USA
Period5/21/905/25/90

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

King, R., Gruenbaum, P. E., Sinton, R. A., & Swanson, R. M. (1990). Passivated emitters in silicon solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 1, pp. 227-232). Publ by IEEE.