PAssivated boron emitters for N-type buried contact solar cells

Alexander M. SIade, Christiana Honsberg, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The emitter saturation current, Joe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO2 passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for Joe varied from 1.5 - 300 fA/cm2. The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages268-271
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

SIade, A. M., Honsberg, C., & Wenham, S. R. (2000). PAssivated boron emitters for N-type buried contact solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 268-271). [915809] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915809