PAssivated boron emitters for N-type buried contact solar cells

Alexander M. SIade; Christiana Honsberg; Stuart R. Wenham

doi:10.1109/PVSC.2000.915809

PAssivated boron emitters for N-type buried contact solar cells

Alexander M. SIade, Christiana Honsberg, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The emitter saturation current, J_oe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO₂ passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for J_oe varied from 1.5 - 300 fA/cm². The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	268-271
Number of pages	4
Volume	2000-January
ISBN (Print)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.915809
State	Published - 2000
Externally published	Yes
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	9/15/00 → 9/22/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/PVSC.2000.915809

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PAssivated boron emitters for N-type buried contact solar cells. / SIade, Alexander M.; Honsberg, Christiana; Wenham, Stuart R.
Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 268-271 915809.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

SIade, AM, Honsberg, C & Wenham, SR 2000, PAssivated boron emitters for N-type buried contact solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 915809, Institute of Electrical and Electronics Engineers Inc., pp. 268-271, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.915809

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abstract = "The emitter saturation current, Joe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO2 passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for Joe varied from 1.5 - 300 fA/cm2. The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter.",

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year = "2000",

doi = "10.1109/PVSC.2000.915809",

language = "English (US)",

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booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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AU - Honsberg, Christiana

AU - Wenham, Stuart R.

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N2 - The emitter saturation current, Joe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO2 passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for Joe varied from 1.5 - 300 fA/cm2. The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter.

AB - The emitter saturation current, Joe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO2 passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for Joe varied from 1.5 - 300 fA/cm2. The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter.

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ER -

PAssivated boron emitters for N-type buried contact solar cells

Abstract

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