Pass - a chalcogenide-based lithography scheme for I.C. fabrication

Michael Kozicki, S. W. Hsia, A. E. Owen, P. J S Ewen

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

This paper contains details of a multi-layer resist scheme which provides excellent resolution capability as well as reducing many of the problems associated with the use of conventional microlithographic resists. In the "PASS" (planarized arsenic/sulfur/silver) scheme, surface planarization is first achieved by spinning on a layer which is self levelling by spin-casting. A thin film of A3S67 (at. %) is then vacuum deposited on this layer and topped with silver. The planar nature of the resist scheme reduces the problems of focus variations at steps in the circuit topology for optical lithography. During exposure, the silver diffuses rapidly into the As-S with little lateral spread. The As-S compound is soluble in a CF4 plasma whereas the As-S-Ag ternary compound is extremely insoluble under the same conditions. We can therefore dry develop the active layer. The unremoved ternary is then used to selectively protect the planarizing layer during the subsequent dry etch of this material. In experimental studies, the resist system exhibited extremely high resolution; contrast is typically in excess of 13 for optical illumination and electron-beam direct writing has produced 35 nm lines spaced by 35 nm in the active layer.

Original languageEnglish (US)
Pages (from-to)1341-1344
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume137-138
Issue numberPART 2
DOIs
StatePublished - 1991

Fingerprint

Silver
Lithography
lithography
Fabrication
fabrication
Electric network topology
silver
Arsenic
Photolithography
Sulfur
Electron beams
Casting
Lighting
Vacuum
Plasmas
Thin films
leveling
arsenic
metal spinning
sulfur

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Pass - a chalcogenide-based lithography scheme for I.C. fabrication. / Kozicki, Michael; Hsia, S. W.; Owen, A. E.; Ewen, P. J S.

In: Journal of Non-Crystalline Solids, Vol. 137-138, No. PART 2, 1991, p. 1341-1344.

Research output: Contribution to journalArticle

Kozicki, Michael ; Hsia, S. W. ; Owen, A. E. ; Ewen, P. J S. / Pass - a chalcogenide-based lithography scheme for I.C. fabrication. In: Journal of Non-Crystalline Solids. 1991 ; Vol. 137-138, No. PART 2. pp. 1341-1344.
@article{9397f14f88d44e2faffff292d1b1fd1b,
title = "Pass - a chalcogenide-based lithography scheme for I.C. fabrication",
abstract = "This paper contains details of a multi-layer resist scheme which provides excellent resolution capability as well as reducing many of the problems associated with the use of conventional microlithographic resists. In the {"}PASS{"} (planarized arsenic/sulfur/silver) scheme, surface planarization is first achieved by spinning on a layer which is self levelling by spin-casting. A thin film of A3S67 (at. {\%}) is then vacuum deposited on this layer and topped with silver. The planar nature of the resist scheme reduces the problems of focus variations at steps in the circuit topology for optical lithography. During exposure, the silver diffuses rapidly into the As-S with little lateral spread. The As-S compound is soluble in a CF4 plasma whereas the As-S-Ag ternary compound is extremely insoluble under the same conditions. We can therefore dry develop the active layer. The unremoved ternary is then used to selectively protect the planarizing layer during the subsequent dry etch of this material. In experimental studies, the resist system exhibited extremely high resolution; contrast is typically in excess of 13 for optical illumination and electron-beam direct writing has produced 35 nm lines spaced by 35 nm in the active layer.",
author = "Michael Kozicki and Hsia, {S. W.} and Owen, {A. E.} and Ewen, {P. J S}",
year = "1991",
doi = "10.1016/S0022-3093(05)80372-2",
language = "English (US)",
volume = "137-138",
pages = "1341--1344",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "PART 2",

}

TY - JOUR

T1 - Pass - a chalcogenide-based lithography scheme for I.C. fabrication

AU - Kozicki, Michael

AU - Hsia, S. W.

AU - Owen, A. E.

AU - Ewen, P. J S

PY - 1991

Y1 - 1991

N2 - This paper contains details of a multi-layer resist scheme which provides excellent resolution capability as well as reducing many of the problems associated with the use of conventional microlithographic resists. In the "PASS" (planarized arsenic/sulfur/silver) scheme, surface planarization is first achieved by spinning on a layer which is self levelling by spin-casting. A thin film of A3S67 (at. %) is then vacuum deposited on this layer and topped with silver. The planar nature of the resist scheme reduces the problems of focus variations at steps in the circuit topology for optical lithography. During exposure, the silver diffuses rapidly into the As-S with little lateral spread. The As-S compound is soluble in a CF4 plasma whereas the As-S-Ag ternary compound is extremely insoluble under the same conditions. We can therefore dry develop the active layer. The unremoved ternary is then used to selectively protect the planarizing layer during the subsequent dry etch of this material. In experimental studies, the resist system exhibited extremely high resolution; contrast is typically in excess of 13 for optical illumination and electron-beam direct writing has produced 35 nm lines spaced by 35 nm in the active layer.

AB - This paper contains details of a multi-layer resist scheme which provides excellent resolution capability as well as reducing many of the problems associated with the use of conventional microlithographic resists. In the "PASS" (planarized arsenic/sulfur/silver) scheme, surface planarization is first achieved by spinning on a layer which is self levelling by spin-casting. A thin film of A3S67 (at. %) is then vacuum deposited on this layer and topped with silver. The planar nature of the resist scheme reduces the problems of focus variations at steps in the circuit topology for optical lithography. During exposure, the silver diffuses rapidly into the As-S with little lateral spread. The As-S compound is soluble in a CF4 plasma whereas the As-S-Ag ternary compound is extremely insoluble under the same conditions. We can therefore dry develop the active layer. The unremoved ternary is then used to selectively protect the planarizing layer during the subsequent dry etch of this material. In experimental studies, the resist system exhibited extremely high resolution; contrast is typically in excess of 13 for optical illumination and electron-beam direct writing has produced 35 nm lines spaced by 35 nm in the active layer.

UR - http://www.scopus.com/inward/record.url?scp=0006176748&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006176748&partnerID=8YFLogxK

U2 - 10.1016/S0022-3093(05)80372-2

DO - 10.1016/S0022-3093(05)80372-2

M3 - Article

AN - SCOPUS:0006176748

VL - 137-138

SP - 1341

EP - 1344

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - PART 2

ER -