@article{2f45ed6f867c42e2bd1ac7f7d43f9674,
title = "Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP",
abstract = "We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.",
keywords = "Cellular automaton, Charge transport modeling, GaAs, Monte Carlo, Semiconductors, Si",
author = "Marco Saraniti and Yibing Hu and Stephen Goodnick",
note = "Funding Information: Saraniti Marco saraniti@iit.edu 1 Hu Yibing 2 Goodnick Stephen M. 3 1 Department of Electrical and Computer Engineering Illinois Institute of Technology 3301 South Dearborn Chicago, IL 60616-3793 USA iit.edu 2 Agere Systems Allentown, PA USA lsi.com 3 Department of Electrical Engineering Arizona State University Tempe, AZ USA asu.edu 2002 15 4 743 750 01 05 2001 01 04 2002 2002 Copyright {\textcopyright} 2002 Hindawi Publishing Corporation We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-generated carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters. http://dx.doi.org/10.13039/100000001 National Science Foundation ECS-9976484 ",
year = "2002",
month = dec,
doi = "10.1080/1065514021000012354",
language = "English (US)",
volume = "15",
pages = "743--750",
journal = "VLSI Design",
issn = "1065-514X",
publisher = "Hindawi Publishing Corporation",
number = "4",
}