Abstract
We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 743-750 |
| Number of pages | 8 |
| Journal | VLSI Design |
| Volume | 15 |
| Issue number | 4 |
| DOIs | |
| State | Published - Dec 2002 |
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Keywords
- Cellular automaton
- Charge transport modeling
- GaAs
- Monte Carlo
- Semiconductors
- Si
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP. / Saraniti, Marco; Hu, Yibing; Goodnick, Stephen.
In: VLSI Design, Vol. 15, No. 4, 12.2002, p. 743-750.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP
AU - Saraniti, Marco
AU - Hu, Yibing
AU - Goodnick, Stephen
PY - 2002/12
Y1 - 2002/12
N2 - We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.
AB - We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.
KW - Cellular automaton
KW - Charge transport modeling
KW - GaAs
KW - Monte Carlo
KW - Semiconductors
KW - Si
UR - http://www.scopus.com/inward/record.url?scp=0036903097&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036903097&partnerID=8YFLogxK
U2 - 10.1080/1065514021000012354
DO - 10.1080/1065514021000012354
M3 - Article
AN - SCOPUS:0036903097
VL - 15
SP - 743
EP - 750
JO - VLSI Design
JF - VLSI Design
SN - 1065-514X
IS - 4
ER -