Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP

Marco Saraniti; Yibing Hu; Stephen Goodnick

doi:10.1080/1065514021000012354

Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP

Marco Saraniti, Yibing Hu, Stephen Goodnick

Research output: Contribution to journal › Article › peer-review

Abstract

We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

Original language	English (US)
Pages (from-to)	743-750
Number of pages	8
Journal	VLSI Design
Volume	15
Issue number	4
DOIs	https://doi.org/10.1080/1065514021000012354
State	Published - Dec 2002

Keywords

Cellular automaton
Charge transport modeling
GaAs
Monte Carlo
Semiconductors
Si

ASJC Scopus subject areas

Hardware and Architecture
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

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10.1080/1065514021000012354

Cite this

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abstract = "We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.",

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AU - Saraniti, Marco

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AU - Goodnick, Stephen

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Y1 - 2002/12

N2 - We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

AB - We discuss the application of the fullband cellular automaton (CA) method for the simulation of charge transport in several semiconductors. Basing the selection of the state after scattering on simple look-up tables, the approach is physically equivalent to the full band Monte Carlo (MC) approach but is much faster. Furthermore, the structure of the pre-tabulated transition probabilities naturally allows for an extension of the model to fully anisotropic scattering without additional computational burden. Simulation results of transport of electrons and holes in several materials are discussed, with particular emphasis on the transient response of photo-general carriers in InP and GaAs. Finally, a discussion on parallel algorithms is presented, for the implementation of the code on workstation clusters.

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KW - Semiconductors

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Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP

Abstract

Keywords

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