Partial and total α parameters in semiconductor optical devices

C. Z. Ning

doi:10.1063/1.121216

Partial and total α parameters in semiconductor optical devices

C. Z. Ning

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

α parameters due to partial variation of carrier density (α_N) or temperature (α_T) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (α_t) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual α_N, the partial α_T and total α_t show quite different behavior with changes in underlying variables and could be positive, negative, or singular.

Original language	English (US)
Pages (from-to)	1887-1889
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	15
DOIs	https://doi.org/10.1063/1.121216
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.121216

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title = "Partial and total α parameters in semiconductor optical devices",

abstract = "α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.",

author = "Ning, {C. Z.}",

year = "1998",

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language = "English (US)",

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PY - 1998

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AB - α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.

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U2 - 10.1063/1.121216

DO - 10.1063/1.121216

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VL - 72

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Partial and total α parameters in semiconductor optical devices

Abstract

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