Parallel and perpendicular hole transport in heterostructures with high AlAs mole-fraction barriers

R. A. Kiehl; Hadas Shtrikman; J. Yates

doi:10.1063/1.104465

Parallel and perpendicular hole transport in heterostructures with high AlAs mole-fraction barriers

R. A. Kiehl, Hadas Shtrikman, J. Yates

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The potential advantages of high-barrier quantum well structures for p-channel field-effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current-voltage characteristics of metal-(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm²/V s with a density of 1.0×10¹² cm^-2 are obtained at 77 K and reductions in perpendicular currents by several orders-of-magnitude are obtained at 300 and 77 K.

Original language	English (US)
Pages (from-to)	954-956
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1063/1.104465
State	Published - 1991
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Parallel and perpendicular hole transport in heterostructures with high AlAs mole-fraction barriers",

abstract = "The potential advantages of high-barrier quantum well structures for p-channel field-effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current-voltage characteristics of metal-(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm2/V s with a density of 1.0×1012 cm-2 are obtained at 77 K and reductions in perpendicular currents by several orders-of-magnitude are obtained at 300 and 77 K.",

author = "Kiehl, {R. A.} and Hadas Shtrikman and J. Yates",

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AU - Kiehl, R. A.

AU - Shtrikman, Hadas

AU - Yates, J.

PY - 1991

Y1 - 1991

N2 - The potential advantages of high-barrier quantum well structures for p-channel field-effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current-voltage characteristics of metal-(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm2/V s with a density of 1.0×1012 cm-2 are obtained at 77 K and reductions in perpendicular currents by several orders-of-magnitude are obtained at 300 and 77 K.

AB - The potential advantages of high-barrier quantum well structures for p-channel field-effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current-voltage characteristics of metal-(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm2/V s with a density of 1.0×1012 cm-2 are obtained at 77 K and reductions in perpendicular currents by several orders-of-magnitude are obtained at 300 and 77 K.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Parallel and perpendicular hole transport in heterostructures with high AlAs mole-fraction barriers

Abstract

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