Parallel and perpendicular hole transport in heterostructures with high AlAs mole-fraction barriers

R. A. Kiehl, Hadas Shtrikman, J. Yates

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The potential advantages of high-barrier quantum well structures for p-channel field-effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current-voltage characteristics of metal-(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm2/V s with a density of 1.0×1012 cm-2 are obtained at 77 K and reductions in perpendicular currents by several orders-of-magnitude are obtained at 300 and 77 K.

Original languageEnglish (US)
Pages (from-to)954-956
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number9
DOIs
StatePublished - Dec 1 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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