Paracrystallites found in evaporated amorphous tetrahedral semiconductors

M. M.J. Treacy; J. M. Gibson; P. J. Keblinski

doi:10.1016/S0022-3093(98)00371-8

Paracrystallites found in evaporated amorphous tetrahedral semiconductors

M. M.J. Treacy, J. M. Gibson, P. J. Keblinski

Research output: Contribution to journal › Article › peer-review

156 Scopus citations

Abstract

Variable coherence microscopy shows that as-deposited amorphous germanium and silicon contain medium-range order. The ordering can be explained by a fine-grained paracrystallite material in which intergranular stress has been relaxed by deformation. On annealing, the paracrystallite structure transforms towards the lower-energy continuous random network (CRN). We present data on a variety of vacuum-evaporated samples, and on molecular dynamics simulations of candidate structures.

Original language	English (US)
Pages (from-to)	99-110
Number of pages	12
Journal	Journal of Non-Crystalline Solids
Volume	231
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-3093(98)00371-8
State	Published - Jul 1 1998
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(98)00371-8

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@article{bffe5db706a543da8acc226e998eb9e5,

title = "Paracrystallites found in evaporated amorphous tetrahedral semiconductors",

abstract = "Variable coherence microscopy shows that as-deposited amorphous germanium and silicon contain medium-range order. The ordering can be explained by a fine-grained paracrystallite material in which intergranular stress has been relaxed by deformation. On annealing, the paracrystallite structure transforms towards the lower-energy continuous random network (CRN). We present data on a variety of vacuum-evaporated samples, and on molecular dynamics simulations of candidate structures.",

author = "Treacy, {M. M.J.} and Gibson, {J. M.} and Keblinski, {P. J.}",

year = "1998",

month = jul,

day = "1",

doi = "10.1016/S0022-3093(98)00371-8",

language = "English (US)",

volume = "231",

pages = "99--110",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Paracrystallites found in evaporated amorphous tetrahedral semiconductors

AU - Treacy, M. M.J.

AU - Gibson, J. M.

AU - Keblinski, P. J.

PY - 1998/7/1

Y1 - 1998/7/1

N2 - Variable coherence microscopy shows that as-deposited amorphous germanium and silicon contain medium-range order. The ordering can be explained by a fine-grained paracrystallite material in which intergranular stress has been relaxed by deformation. On annealing, the paracrystallite structure transforms towards the lower-energy continuous random network (CRN). We present data on a variety of vacuum-evaporated samples, and on molecular dynamics simulations of candidate structures.

AB - Variable coherence microscopy shows that as-deposited amorphous germanium and silicon contain medium-range order. The ordering can be explained by a fine-grained paracrystallite material in which intergranular stress has been relaxed by deformation. On annealing, the paracrystallite structure transforms towards the lower-energy continuous random network (CRN). We present data on a variety of vacuum-evaporated samples, and on molecular dynamics simulations of candidate structures.

UR - http://www.scopus.com/inward/record.url?scp=0032123080&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032123080&partnerID=8YFLogxK

U2 - 10.1016/S0022-3093(98)00371-8

DO - 10.1016/S0022-3093(98)00371-8

M3 - Article

AN - SCOPUS:0032123080

SN - 0022-3093

VL - 231

SP - 99

EP - 110

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-2

ER -

Paracrystallites found in evaporated amorphous tetrahedral semiconductors

Abstract

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