Paracrystallites found in evaporated amorphous tetrahedral semiconductors

M. M.J. Treacy, J. M. Gibson, P. J. Keblinski

Research output: Contribution to journalArticle

145 Scopus citations

Abstract

Variable coherence microscopy shows that as-deposited amorphous germanium and silicon contain medium-range order. The ordering can be explained by a fine-grained paracrystallite material in which intergranular stress has been relaxed by deformation. On annealing, the paracrystallite structure transforms towards the lower-energy continuous random network (CRN). We present data on a variety of vacuum-evaporated samples, and on molecular dynamics simulations of candidate structures.

Original languageEnglish (US)
Pages (from-to)99-110
Number of pages12
JournalJournal of Non-Crystalline Solids
Volume231
Issue number1-2
DOIs
StatePublished - Jul 1 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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