P-type Upgraded Metallurgical-Grade Multicrystalline Silicon Heterojunction Solar Cells with Open-Circuit Voltages over 690 mV

Bruno Vicari Stefani, William Weigand, Matthew Wright, Anastasia Soeriyadi, Zhengshan (Jason) Yu, Moonyong Kim, Daniel Chen, Zachary Holman, Brett Hallam

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Herein, low-cost p-type upgraded metallurgical-grade (UMG) multicrystalline silicon wafers are processed from the edge of the silicon cast using a multi-stage defect-engineering approach, incorporating gettering and hydrogenation to improve the wafer quality. Significant reductions in the concentration of interstitial iron and improvements in the bulk lifetime from 15 to 130 µs are observed. Subsequently, all the surface layers are removed and silicon heterojunction solar cells are fabricated. The cells exhibit an efficiency of 18.7%, and open-circuit voltages over 690 mV is formed using wafers with initial lifetimes of <15 µs. This demonstration of such high voltages, the highest recorded for this material to date, indicates the power of the gettering and hydrogenation processes used and the potential of p-type UMG silicon to fabricate heterojunction solar cells and other solar cell technologies capable of high open-circuit voltages.

Original languageEnglish (US)
Article number1900319
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
StatePublished - Jan 1 2019
Externally publishedYes

Fingerprint

Silicon
Open circuit voltage
open circuit voltage
Heterojunctions
heterojunctions
grade
Solar cells
solar cells
Hydrogenation
wafers
silicon
hydrogenation
high voltages
Silicon wafers
life (durability)
Demonstrations
Iron
casts
surface layers
Defects

Keywords

  • defect-engineering
  • gettering
  • heterojunction
  • hydrogenation
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

P-type Upgraded Metallurgical-Grade Multicrystalline Silicon Heterojunction Solar Cells with Open-Circuit Voltages over 690 mV. / Vicari Stefani, Bruno; Weigand, William; Wright, Matthew; Soeriyadi, Anastasia; Yu, Zhengshan (Jason); Kim, Moonyong; Chen, Daniel; Holman, Zachary; Hallam, Brett.

In: Physica Status Solidi (A) Applications and Materials Science, 01.01.2019.

Research output: Contribution to journalArticle

@article{428b8ffcea7f42afb48c6fc63478def3,
title = "P-type Upgraded Metallurgical-Grade Multicrystalline Silicon Heterojunction Solar Cells with Open-Circuit Voltages over 690 mV",
abstract = "Herein, low-cost p-type upgraded metallurgical-grade (UMG) multicrystalline silicon wafers are processed from the edge of the silicon cast using a multi-stage defect-engineering approach, incorporating gettering and hydrogenation to improve the wafer quality. Significant reductions in the concentration of interstitial iron and improvements in the bulk lifetime from 15 to 130 µs are observed. Subsequently, all the surface layers are removed and silicon heterojunction solar cells are fabricated. The cells exhibit an efficiency of 18.7{\%}, and open-circuit voltages over 690 mV is formed using wafers with initial lifetimes of <15 µs. This demonstration of such high voltages, the highest recorded for this material to date, indicates the power of the gettering and hydrogenation processes used and the potential of p-type UMG silicon to fabricate heterojunction solar cells and other solar cell technologies capable of high open-circuit voltages.",
keywords = "defect-engineering, gettering, heterojunction, hydrogenation, silicon",
author = "{Vicari Stefani}, Bruno and William Weigand and Matthew Wright and Anastasia Soeriyadi and Yu, {Zhengshan (Jason)} and Moonyong Kim and Daniel Chen and Zachary Holman and Brett Hallam",
year = "2019",
month = "1",
day = "1",
doi = "10.1002/pssa.201900319",
language = "English (US)",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - P-type Upgraded Metallurgical-Grade Multicrystalline Silicon Heterojunction Solar Cells with Open-Circuit Voltages over 690 mV

AU - Vicari Stefani, Bruno

AU - Weigand, William

AU - Wright, Matthew

AU - Soeriyadi, Anastasia

AU - Yu, Zhengshan (Jason)

AU - Kim, Moonyong

AU - Chen, Daniel

AU - Holman, Zachary

AU - Hallam, Brett

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Herein, low-cost p-type upgraded metallurgical-grade (UMG) multicrystalline silicon wafers are processed from the edge of the silicon cast using a multi-stage defect-engineering approach, incorporating gettering and hydrogenation to improve the wafer quality. Significant reductions in the concentration of interstitial iron and improvements in the bulk lifetime from 15 to 130 µs are observed. Subsequently, all the surface layers are removed and silicon heterojunction solar cells are fabricated. The cells exhibit an efficiency of 18.7%, and open-circuit voltages over 690 mV is formed using wafers with initial lifetimes of <15 µs. This demonstration of such high voltages, the highest recorded for this material to date, indicates the power of the gettering and hydrogenation processes used and the potential of p-type UMG silicon to fabricate heterojunction solar cells and other solar cell technologies capable of high open-circuit voltages.

AB - Herein, low-cost p-type upgraded metallurgical-grade (UMG) multicrystalline silicon wafers are processed from the edge of the silicon cast using a multi-stage defect-engineering approach, incorporating gettering and hydrogenation to improve the wafer quality. Significant reductions in the concentration of interstitial iron and improvements in the bulk lifetime from 15 to 130 µs are observed. Subsequently, all the surface layers are removed and silicon heterojunction solar cells are fabricated. The cells exhibit an efficiency of 18.7%, and open-circuit voltages over 690 mV is formed using wafers with initial lifetimes of <15 µs. This demonstration of such high voltages, the highest recorded for this material to date, indicates the power of the gettering and hydrogenation processes used and the potential of p-type UMG silicon to fabricate heterojunction solar cells and other solar cell technologies capable of high open-circuit voltages.

KW - defect-engineering

KW - gettering

KW - heterojunction

KW - hydrogenation

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=85069867755&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069867755&partnerID=8YFLogxK

U2 - 10.1002/pssa.201900319

DO - 10.1002/pssa.201900319

M3 - Article

AN - SCOPUS:85069867755

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

M1 - 1900319

ER -