TY - GEN
T1 - P-n junction from solution
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
AU - Wang, L.
AU - Han, K.
AU - Han, X.
AU - Tao, M.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Inorganic solar cells are traditionally fabricated by vacuum-based semiconductor processing. Although cuprous oxide (Cu2O) can be synthesized by wet-chemical methods, its natural p-type conductivity has prevented an efficient p-n homojunction solar cell. In this paper we report the effect of solution pH on the conduction type (n- or p-type) of Cu2O in electrodeposition. It is found that Cu2O electrodeposited at bath pH below 7.5 is n-type, while Cu2O deposited at bath pH above 9 is p-type. This is likely because bath pH controls the amount of oxygen incorporated into the growing Cu2O film and thus the nature of native point defects. Capacitance-voltage and photocurrent measurements confirm that the conduction type of Cu2O can be controlled by bath pH. X-ray diffraction and scanning electron microscopy reveal that while n-type Cu 2O deposited on Cu substrate appears amorphous, n-type Cu 2O deposited on p-type polycrystalline Cu2O is polycrystalline. Current-voltage measurements indicate that Al makes ohmic contacts to n-type Cu2O and Cu to p-type Cu2O. Furthermore, a two-step process is adopted to deposit p-type and n-type Cu 2O in sequence for the formation of a p-n homojunction in Cu 2O. Photocurrent and current-voltage characterization confirm that a p-n homojunction of Cu2O is achieved.
AB - Inorganic solar cells are traditionally fabricated by vacuum-based semiconductor processing. Although cuprous oxide (Cu2O) can be synthesized by wet-chemical methods, its natural p-type conductivity has prevented an efficient p-n homojunction solar cell. In this paper we report the effect of solution pH on the conduction type (n- or p-type) of Cu2O in electrodeposition. It is found that Cu2O electrodeposited at bath pH below 7.5 is n-type, while Cu2O deposited at bath pH above 9 is p-type. This is likely because bath pH controls the amount of oxygen incorporated into the growing Cu2O film and thus the nature of native point defects. Capacitance-voltage and photocurrent measurements confirm that the conduction type of Cu2O can be controlled by bath pH. X-ray diffraction and scanning electron microscopy reveal that while n-type Cu 2O deposited on Cu substrate appears amorphous, n-type Cu 2O deposited on p-type polycrystalline Cu2O is polycrystalline. Current-voltage measurements indicate that Al makes ohmic contacts to n-type Cu2O and Cu to p-type Cu2O. Furthermore, a two-step process is adopted to deposit p-type and n-type Cu 2O in sequence for the formation of a p-n homojunction in Cu 2O. Photocurrent and current-voltage characterization confirm that a p-n homojunction of Cu2O is achieved.
UR - http://www.scopus.com/inward/record.url?scp=84879727394&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2008.4922869
DO - 10.1109/PVSC.2008.4922869
M3 - Conference contribution
AN - SCOPUS:84879727394
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -