P-n junction from solution

Cuprous oxide p-n homojunction by electrodeposition

L. Wang, K. Han, X. Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Inorganic solar cells are traditionally fabricated by vacuum-based semiconductor processing. Although cuprous oxide (Cu2O) can be synthesized by wet-chemical methods, its natural p-type conductivity has prevented an efficient p-n homojunction solar cell. In this paper we report the effect of solution pH on the conduction type (n- or p-type) of Cu2O in electrodeposition. It is found that Cu2O electrodeposited at bath pH below 7.5 is n-type, while Cu2O deposited at bath pH above 9 is p-type. This is likely because bath pH controls the amount of oxygen incorporated into the growing Cu2O film and thus the nature of native point defects. Capacitance-voltage and photocurrent measurements confirm that the conduction type of Cu2O can be controlled by bath pH. X-ray diffraction and scanning electron microscopy reveal that while n-type Cu 2O deposited on Cu substrate appears amorphous, n-type Cu 2O deposited on p-type polycrystalline Cu2O is polycrystalline. Current-voltage measurements indicate that Al makes ohmic contacts to n-type Cu2O and Cu to p-type Cu2O. Furthermore, a two-step process is adopted to deposit p-type and n-type Cu 2O in sequence for the formation of a p-n homojunction in Cu 2O. Photocurrent and current-voltage characterization confirm that a p-n homojunction of Cu2O is achieved.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

Fingerprint

Photocurrents
Electrodeposition
Solar cells
Oxides
Ohmic contacts
Voltage measurement
Electric potential
Electric current measurement
Film growth
Point defects
Capacitance
Deposits
Vacuum
Semiconductor materials
X ray diffraction
Scanning electron microscopy
Oxygen
Substrates
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Wang, L., Han, K., Han, X., & Tao, M. (2008). P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922869] https://doi.org/10.1109/PVSC.2008.4922869

P-n junction from solution : Cuprous oxide p-n homojunction by electrodeposition. / Wang, L.; Han, K.; Han, X.; Tao, Meng.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922869.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, L, Han, K, Han, X & Tao, M 2008, P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922869, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922869
Wang L, Han K, Han X, Tao M. P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922869 https://doi.org/10.1109/PVSC.2008.4922869
Wang, L. ; Han, K. ; Han, X. ; Tao, Meng. / P-n junction from solution : Cuprous oxide p-n homojunction by electrodeposition. Conference Record of the IEEE Photovoltaic Specialists Conference. 2008.
@inproceedings{187cb7423232450d9367356bfe67c7ac,
title = "P-n junction from solution: Cuprous oxide p-n homojunction by electrodeposition",
abstract = "Inorganic solar cells are traditionally fabricated by vacuum-based semiconductor processing. Although cuprous oxide (Cu2O) can be synthesized by wet-chemical methods, its natural p-type conductivity has prevented an efficient p-n homojunction solar cell. In this paper we report the effect of solution pH on the conduction type (n- or p-type) of Cu2O in electrodeposition. It is found that Cu2O electrodeposited at bath pH below 7.5 is n-type, while Cu2O deposited at bath pH above 9 is p-type. This is likely because bath pH controls the amount of oxygen incorporated into the growing Cu2O film and thus the nature of native point defects. Capacitance-voltage and photocurrent measurements confirm that the conduction type of Cu2O can be controlled by bath pH. X-ray diffraction and scanning electron microscopy reveal that while n-type Cu 2O deposited on Cu substrate appears amorphous, n-type Cu 2O deposited on p-type polycrystalline Cu2O is polycrystalline. Current-voltage measurements indicate that Al makes ohmic contacts to n-type Cu2O and Cu to p-type Cu2O. Furthermore, a two-step process is adopted to deposit p-type and n-type Cu 2O in sequence for the formation of a p-n homojunction in Cu 2O. Photocurrent and current-voltage characterization confirm that a p-n homojunction of Cu2O is achieved.",
author = "L. Wang and K. Han and X. Han and Meng Tao",
year = "2008",
doi = "10.1109/PVSC.2008.4922869",
language = "English (US)",
isbn = "9781424416417",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

}

TY - GEN

T1 - P-n junction from solution

T2 - Cuprous oxide p-n homojunction by electrodeposition

AU - Wang, L.

AU - Han, K.

AU - Han, X.

AU - Tao, Meng

PY - 2008

Y1 - 2008

N2 - Inorganic solar cells are traditionally fabricated by vacuum-based semiconductor processing. Although cuprous oxide (Cu2O) can be synthesized by wet-chemical methods, its natural p-type conductivity has prevented an efficient p-n homojunction solar cell. In this paper we report the effect of solution pH on the conduction type (n- or p-type) of Cu2O in electrodeposition. It is found that Cu2O electrodeposited at bath pH below 7.5 is n-type, while Cu2O deposited at bath pH above 9 is p-type. This is likely because bath pH controls the amount of oxygen incorporated into the growing Cu2O film and thus the nature of native point defects. Capacitance-voltage and photocurrent measurements confirm that the conduction type of Cu2O can be controlled by bath pH. X-ray diffraction and scanning electron microscopy reveal that while n-type Cu 2O deposited on Cu substrate appears amorphous, n-type Cu 2O deposited on p-type polycrystalline Cu2O is polycrystalline. Current-voltage measurements indicate that Al makes ohmic contacts to n-type Cu2O and Cu to p-type Cu2O. Furthermore, a two-step process is adopted to deposit p-type and n-type Cu 2O in sequence for the formation of a p-n homojunction in Cu 2O. Photocurrent and current-voltage characterization confirm that a p-n homojunction of Cu2O is achieved.

AB - Inorganic solar cells are traditionally fabricated by vacuum-based semiconductor processing. Although cuprous oxide (Cu2O) can be synthesized by wet-chemical methods, its natural p-type conductivity has prevented an efficient p-n homojunction solar cell. In this paper we report the effect of solution pH on the conduction type (n- or p-type) of Cu2O in electrodeposition. It is found that Cu2O electrodeposited at bath pH below 7.5 is n-type, while Cu2O deposited at bath pH above 9 is p-type. This is likely because bath pH controls the amount of oxygen incorporated into the growing Cu2O film and thus the nature of native point defects. Capacitance-voltage and photocurrent measurements confirm that the conduction type of Cu2O can be controlled by bath pH. X-ray diffraction and scanning electron microscopy reveal that while n-type Cu 2O deposited on Cu substrate appears amorphous, n-type Cu 2O deposited on p-type polycrystalline Cu2O is polycrystalline. Current-voltage measurements indicate that Al makes ohmic contacts to n-type Cu2O and Cu to p-type Cu2O. Furthermore, a two-step process is adopted to deposit p-type and n-type Cu 2O in sequence for the formation of a p-n homojunction in Cu 2O. Photocurrent and current-voltage characterization confirm that a p-n homojunction of Cu2O is achieved.

UR - http://www.scopus.com/inward/record.url?scp=84879727394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879727394&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2008.4922869

DO - 10.1109/PVSC.2008.4922869

M3 - Conference contribution

SN - 9781424416417

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -