P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm

M. Dutta, F. A M Koeck, Robert Nemanich, S. Chowdhury

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Owing to its rich material properties, such as high critical electric field, superior thermal conductivity and high electron and hole mobility, diamond has the potential of becoming the material of choice for high power electronic applications. In spite of superior bulk electrical and thermal properties, the only well-known use of diamond in power electronics has been as a heat sink. This is because of the lack of good quality homoepitaxially grown n-type diamond and also the difficulty involved in achieving ohmic contacts due to its very low-work function (0.9 eV)[1]. Although several approaches have been explored to obtain highly doped n-type diamond[2-4] very few have been successful [4-6]. In this presentation we report the successful fabrication and characterization of a p-i-n diode enabled by the development of low-resistance contacts to n-type diamond using Ti/Pt/Au metal contacts. This was made possible by a novel growth scheme where highly P-doped homoepitaxial diamond could be grown consistently.

Original languageEnglish (US)
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages184
Number of pages1
Volume2015-August
ISBN (Print)9781467381345
DOIs
StatePublished - Aug 3 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: Jun 21 2015Jun 24 2015

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period6/21/156/24/15

Fingerprint

Phosphorus
Diamonds
Diodes
Electric fields
Power electronics
Hole mobility
Ohmic contacts
Electron mobility
Heat sinks
Contact resistance
Thermal conductivity
Materials properties
Electric properties
Thermodynamic properties
Fabrication
Metals

Keywords

  • Diamonds
  • Electric breakdown
  • Electric fields
  • Electrical resistance measurement
  • Fabrication
  • Films
  • P-i-n diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dutta, M., Koeck, F. A. M., Nemanich, R., & Chowdhury, S. (2015). P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm. In Device Research Conference - Conference Digest, DRC (Vol. 2015-August, pp. 184). [7175618] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175618

P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm. / Dutta, M.; Koeck, F. A M; Nemanich, Robert; Chowdhury, S.

Device Research Conference - Conference Digest, DRC. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. 184 7175618.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dutta, M, Koeck, FAM, Nemanich, R & Chowdhury, S 2015, P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm. in Device Research Conference - Conference Digest, DRC. vol. 2015-August, 7175618, Institute of Electrical and Electronics Engineers Inc., pp. 184, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 6/21/15. https://doi.org/10.1109/DRC.2015.7175618
Dutta M, Koeck FAM, Nemanich R, Chowdhury S. P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm. In Device Research Conference - Conference Digest, DRC. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. 184. 7175618 https://doi.org/10.1109/DRC.2015.7175618
Dutta, M. ; Koeck, F. A M ; Nemanich, Robert ; Chowdhury, S. / P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm. Device Research Conference - Conference Digest, DRC. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. 184
@inproceedings{6a12c1b0377a41498f5e90576a7f9a3a,
title = "P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm",
abstract = "Owing to its rich material properties, such as high critical electric field, superior thermal conductivity and high electron and hole mobility, diamond has the potential of becoming the material of choice for high power electronic applications. In spite of superior bulk electrical and thermal properties, the only well-known use of diamond in power electronics has been as a heat sink. This is because of the lack of good quality homoepitaxially grown n-type diamond and also the difficulty involved in achieving ohmic contacts due to its very low-work function (0.9 eV)[1]. Although several approaches have been explored to obtain highly doped n-type diamond[2-4] very few have been successful [4-6]. In this presentation we report the successful fabrication and characterization of a p-i-n diode enabled by the development of low-resistance contacts to n-type diamond using Ti/Pt/Au metal contacts. This was made possible by a novel growth scheme where highly P-doped homoepitaxial diamond could be grown consistently.",
keywords = "Diamonds, Electric breakdown, Electric fields, Electrical resistance measurement, Fabrication, Films, P-i-n diodes",
author = "M. Dutta and Koeck, {F. A M} and Robert Nemanich and S. Chowdhury",
year = "2015",
month = "8",
day = "3",
doi = "10.1109/DRC.2015.7175618",
language = "English (US)",
isbn = "9781467381345",
volume = "2015-August",
pages = "184",
booktitle = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - P-i-n diodes enabled by homoepitaxially grown phosphorus doped diamond with breakdown electric field >1.25 MV/cm

AU - Dutta, M.

AU - Koeck, F. A M

AU - Nemanich, Robert

AU - Chowdhury, S.

PY - 2015/8/3

Y1 - 2015/8/3

N2 - Owing to its rich material properties, such as high critical electric field, superior thermal conductivity and high electron and hole mobility, diamond has the potential of becoming the material of choice for high power electronic applications. In spite of superior bulk electrical and thermal properties, the only well-known use of diamond in power electronics has been as a heat sink. This is because of the lack of good quality homoepitaxially grown n-type diamond and also the difficulty involved in achieving ohmic contacts due to its very low-work function (0.9 eV)[1]. Although several approaches have been explored to obtain highly doped n-type diamond[2-4] very few have been successful [4-6]. In this presentation we report the successful fabrication and characterization of a p-i-n diode enabled by the development of low-resistance contacts to n-type diamond using Ti/Pt/Au metal contacts. This was made possible by a novel growth scheme where highly P-doped homoepitaxial diamond could be grown consistently.

AB - Owing to its rich material properties, such as high critical electric field, superior thermal conductivity and high electron and hole mobility, diamond has the potential of becoming the material of choice for high power electronic applications. In spite of superior bulk electrical and thermal properties, the only well-known use of diamond in power electronics has been as a heat sink. This is because of the lack of good quality homoepitaxially grown n-type diamond and also the difficulty involved in achieving ohmic contacts due to its very low-work function (0.9 eV)[1]. Although several approaches have been explored to obtain highly doped n-type diamond[2-4] very few have been successful [4-6]. In this presentation we report the successful fabrication and characterization of a p-i-n diode enabled by the development of low-resistance contacts to n-type diamond using Ti/Pt/Au metal contacts. This was made possible by a novel growth scheme where highly P-doped homoepitaxial diamond could be grown consistently.

KW - Diamonds

KW - Electric breakdown

KW - Electric fields

KW - Electrical resistance measurement

KW - Fabrication

KW - Films

KW - P-i-n diodes

UR - http://www.scopus.com/inward/record.url?scp=84957703912&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957703912&partnerID=8YFLogxK

U2 - 10.1109/DRC.2015.7175618

DO - 10.1109/DRC.2015.7175618

M3 - Conference contribution

SN - 9781467381345

VL - 2015-August

SP - 184

BT - Device Research Conference - Conference Digest, DRC

PB - Institute of Electrical and Electronics Engineers Inc.

ER -