@inproceedings{ac4fd89cd1c9416aabf3213fd32f6df0,
title = "P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide",
abstract = "The photovoltaics industry is expected to slowly transition from p-type mono-Si cells to n-type mono-Si over the next several years. Diffusion of boron into silicon to fabricate a p+ emitter can result in an efficiency-reducing boron rich layer (BRL) which can be removed reliably with an NF3 dry-etch process. The emitter should be passivated with a film that does not result in minority carriers being attracted to its surface. Boron was diffused from a-Si films deposited by PECVD on both sides of n-type Si substrates of 3.3 ohm-cm. The emitters were dry etched with nitrogen trifluoride (NF3). Best results for effective lifetime (198 μs) and emitter saturation current (31.6 fA/cm2) were realized on a sample etched to 89 ω/□ from 71 ω/□, then passivated with 10 nm of Al2O3 and 70 nm of SiNX and subsequently annealed in N2/H2 @ 450 °C for 60 minutes.",
keywords = "boron diffused emitter, charge carrier lifetime, emitter saturation current, high-efficiency, n-type, passivation, photovoltaic cell, silicon, solar cell",
author = "Tim Reblitz and Clarence Tracy and Mark Bailly and Bill Dauksher and Stuart Bowden",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925002",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "634--636",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
}