P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide

Tim Reblitz, Clarence Tracy, Mark Bailly, Bill Dauksher, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photovoltaics industry is expected to slowly transition from p-type mono-Si cells to n-type mono-Si over the next several years. Diffusion of boron into silicon to fabricate a p+ emitter can result in an efficiency-reducing boron rich layer (BRL) which can be removed reliably with an NF3 dry-etch process. The emitter should be passivated with a film that does not result in minority carriers being attracted to its surface. Boron was diffused from a-Si films deposited by PECVD on both sides of n-type Si substrates of 3.3 ohm-cm. The emitters were dry etched with nitrogen trifluoride (NF3). Best results for effective lifetime (198 μs) and emitter saturation current (31.6 fA/cm2) were realized on a sample etched to 89 ω/□ from 71 ω/□, then passivated with 10 nm of Al2O3 and 70 nm of SiNX and subsequently annealed in N2/H2 @ 450 °C for 60 minutes.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages634-636
Number of pages3
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Boron
Aluminum Oxide
Monocrystalline silicon
Nitrogen
Aluminum
Oxides
Silicon
Plasma enhanced chemical vapor deposition
Substrates
nitrogen trifluoride
Industry

Keywords

  • boron diffused emitter
  • charge carrier lifetime
  • emitter saturation current
  • high-efficiency
  • n-type
  • passivation
  • photovoltaic cell
  • silicon
  • solar cell

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Reblitz, T., Tracy, C., Bailly, M., Dauksher, B., & Bowden, S. (2014). P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 634-636). [6925002] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925002

P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide. / Reblitz, Tim; Tracy, Clarence; Bailly, Mark; Dauksher, Bill; Bowden, Stuart.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 634-636 6925002.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Reblitz, T, Tracy, C, Bailly, M, Dauksher, B & Bowden, S 2014, P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925002, Institute of Electrical and Electronics Engineers Inc., pp. 634-636, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925002
Reblitz T, Tracy C, Bailly M, Dauksher B, Bowden S. P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 634-636. 6925002 https://doi.org/10.1109/PVSC.2014.6925002
Reblitz, Tim ; Tracy, Clarence ; Bailly, Mark ; Dauksher, Bill ; Bowden, Stuart. / P+ Emitters on n-Type c-Si dry-etched with nitrogen trifluoride and passivated with ALD aluminum oxide. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 634-636
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