p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET.

Richard Kiehl, Sandip Tiwari, Steven L. Wright, M. A. Olson

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Abstract

A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm**2/V-s hold mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2. 0- mu m gate lengths and 6. 0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.

Original languageEnglish (US)
JournalElectron device letters
Volume9
Issue number6
StatePublished - Feb 1987
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kiehl, R., Tiwari, S., Wright, S. L., & Olson, M. A. (1987). p-CHANNEL QUANTUM-WELL HETEROSTRUCTURE MISFET. Electron device letters, 9(6).