p-Channel Quantum-Well Heterostructure MI3 SFET

Richard A. Kiehl; Sandip Tiwari; Steven L. Wright; M. A. Olson

doi:10.1109/55.726

p-Channel Quantum-Well Heterostructure MI3 SFET

Richard A. Kiehl, Sandip Tiwari, Steven L. Wright, M. A. Olson

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is reported for the first time. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and employs Zn-diffused refractory-metal contacts. The 4100 cm2/V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and A'-factor values as high as 52 mS/mm and 140 mS/V - mm, respectively, are obtained at 77 K in p-channel FET's with 2.0-μm gate lengths and 6.0-μm source-drain spacings, representing state-of-the-art values for p-HFET's at similar dimensions.

Original language	English (US)
Pages (from-to)	309-311
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/55.726
State	Published - Jun 1988
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "p-Channel Quantum-Well Heterostructure MI3 SFET",

abstract = "A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is reported for the first time. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and employs Zn-diffused refractory-metal contacts. The 4100 cm2/V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and A'-factor values as high as 52 mS/mm and 140 mS/V - mm, respectively, are obtained at 77 K in p-channel FET's with 2.0-μm gate lengths and 6.0-μm source-drain spacings, representing state-of-the-art values for p-HFET's at similar dimensions.",

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T1 - p-Channel Quantum-Well Heterostructure MI3 SFET

AU - Kiehl, Richard A.

AU - Tiwari, Sandip

AU - Wright, Steven L.

AU - Olson, M. A.

PY - 1988/6

Y1 - 1988/6

N2 - A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is reported for the first time. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and employs Zn-diffused refractory-metal contacts. The 4100 cm2/V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and A'-factor values as high as 52 mS/mm and 140 mS/V - mm, respectively, are obtained at 77 K in p-channel FET's with 2.0-μm gate lengths and 6.0-μm source-drain spacings, representing state-of-the-art values for p-HFET's at similar dimensions.

AB - A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is reported for the first time. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and employs Zn-diffused refractory-metal contacts. The 4100 cm2/V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and A'-factor values as high as 52 mS/mm and 140 mS/V - mm, respectively, are obtained at 77 K in p-channel FET's with 2.0-μm gate lengths and 6.0-μm source-drain spacings, representing state-of-the-art values for p-HFET's at similar dimensions.

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p-Channel Quantum-Well Heterostructure MI3 SFET

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