p-Channel Quantum-Well Heterostructure MI3 SFET

Richard Kiehl, Sandip Tiwari, Steven L. Wright, M. A. Olson

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is reported for the first time. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and employs Zn-diffused refractory-metal contacts. The 4100 cm2/V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and A'-factor values as high as 52 mS/mm and 140 mS/V - mm, respectively, are obtained at 77 K in p-channel FET's with 2.0-μm gate lengths and 6.0-μm source-drain spacings, representing state-of-the-art values for p-HFET's at similar dimensions.

Original languageEnglish (US)
Pages (from-to)309-311
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number6
DOIs
StatePublished - 1988
Externally publishedYes

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Semiconductor quantum wells
Heterojunctions
Refractory metals
Hole mobility
Transconductance
Field effect transistors
Impurities
Geometry
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

p-Channel Quantum-Well Heterostructure MI3 SFET. / Kiehl, Richard; Tiwari, Sandip; Wright, Steven L.; Olson, M. A.

In: IEEE Electron Device Letters, Vol. 9, No. 6, 1988, p. 309-311.

Research output: Contribution to journalArticle

Kiehl, R, Tiwari, S, Wright, SL & Olson, MA 1988, 'p-Channel Quantum-Well Heterostructure MI3 SFET', IEEE Electron Device Letters, vol. 9, no. 6, pp. 309-311. https://doi.org/10.1109/55.726
Kiehl, Richard ; Tiwari, Sandip ; Wright, Steven L. ; Olson, M. A. / p-Channel Quantum-Well Heterostructure MI3 SFET. In: IEEE Electron Device Letters. 1988 ; Vol. 9, No. 6. pp. 309-311.
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