p-Channel FET Based on p/n Double-Quantum-Well Heterostructure

Richard A. Kiehl; Steven L. Wright; John Yates; Marc A. Olson

doi:10.1109/55.31676

p-Channel FET Based on p/n Double-Quantum-Well Heterostructure

Richard A. Kiehl, Steven L. Wright, John Yates, Marc A. Olson

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4 Scopus citations

Abstract

A p-channel FET based on a heterostructure having verti- cally integrated p- and n-type quantum-well channels is experimentally demonstrated for the first time. The AlGaAs/GaAs heterostructure consists of a quantum well with an underlying p-region positioned above a second quantum well with an underlying n-region. The p-FET is fabricated with self-aligned p+ regions formed by zinc diffusion. Electrical characteristics for 1.5-μm gate lengths are nearly ideal in appearance with an Imax of 90 mA/mm, a gmof 80 mS/mm, and a gm/gdratio of 140 at 77 K. The results demonstrate the viability of such stratified structures for the development of complementary integrated circuits or other circuits requiring integration of multiple device types.

Original language	English (US)
Pages (from-to)	42-44
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1109/55.31676
State	Published - Jan 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "p-Channel FET Based on p/n Double-Quantum-Well Heterostructure",

abstract = "A p-channel FET based on a heterostructure having verti- cally integrated p- and n-type quantum-well channels is experimentally demonstrated for the first time. The AlGaAs/GaAs heterostructure consists of a quantum well with an underlying p-region positioned above a second quantum well with an underlying n-region. The p-FET is fabricated with self-aligned p+ regions formed by zinc diffusion. Electrical characteristics for 1.5-μm gate lengths are nearly ideal in appearance with an Imax of 90 mA/mm, a gmof 80 mS/mm, and a gm/gdratio of 140 at 77 K. The results demonstrate the viability of such stratified structures for the development of complementary integrated circuits or other circuits requiring integration of multiple device types.",

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AU - Kiehl, Richard A.

AU - Wright, Steven L.

AU - Yates, John

AU - Olson, Marc A.

PY - 1989/1

Y1 - 1989/1

N2 - A p-channel FET based on a heterostructure having verti- cally integrated p- and n-type quantum-well channels is experimentally demonstrated for the first time. The AlGaAs/GaAs heterostructure consists of a quantum well with an underlying p-region positioned above a second quantum well with an underlying n-region. The p-FET is fabricated with self-aligned p+ regions formed by zinc diffusion. Electrical characteristics for 1.5-μm gate lengths are nearly ideal in appearance with an Imax of 90 mA/mm, a gmof 80 mS/mm, and a gm/gdratio of 140 at 77 K. The results demonstrate the viability of such stratified structures for the development of complementary integrated circuits or other circuits requiring integration of multiple device types.

AB - A p-channel FET based on a heterostructure having verti- cally integrated p- and n-type quantum-well channels is experimentally demonstrated for the first time. The AlGaAs/GaAs heterostructure consists of a quantum well with an underlying p-region positioned above a second quantum well with an underlying n-region. The p-FET is fabricated with self-aligned p+ regions formed by zinc diffusion. Electrical characteristics for 1.5-μm gate lengths are nearly ideal in appearance with an Imax of 90 mA/mm, a gmof 80 mS/mm, and a gm/gdratio of 140 at 77 K. The results demonstrate the viability of such stratified structures for the development of complementary integrated circuits or other circuits requiring integration of multiple device types.

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p-Channel FET Based on p/n Double-Quantum-Well Heterostructure

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