A p-channel FET based on a heterostructure having verti- cally integrated p- and n-type quantum-well channels is experimentally demonstrated for the first time. The AlGaAs/GaAs heterostructure consists of a quantum well with an underlying p-region positioned above a second quantum well with an underlying n-region. The p-FET is fabricated with self-aligned p+ regions formed by zinc diffusion. Electrical characteristics for 1.5-μm gate lengths are nearly ideal in appearance with an Imax of 90 mA/mm, a gmof 80 mS/mm, and a gm/gdratio of 140 at 77 K. The results demonstrate the viability of such stratified structures for the development of complementary integrated circuits or other circuits requiring integration of multiple device types.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering