The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Oct 1984|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering