p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

Richard Kiehl, A. C. Gossard

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

Original languageEnglish (US)
Pages (from-to)420-422
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number10
DOIs
StatePublished - 1984
Externally publishedYes

Fingerprint

Logic gates
High electron mobility transistors
Molecular beam epitaxy
Energy dissipation
Gases
Modulation
Networks (circuits)
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates. / Kiehl, Richard; Gossard, A. C.

In: IEEE Electron Device Letters, Vol. 5, No. 10, 1984, p. 420-422.

Research output: Contribution to journalArticle

@article{fcff7432af6548cd8f402390603e7a06,
title = "p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates",
abstract = "The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.",
author = "Richard Kiehl and Gossard, {A. C.}",
year = "1984",
doi = "10.1109/EDL.1984.25970",
language = "English (US)",
volume = "5",
pages = "420--422",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

AU - Kiehl, Richard

AU - Gossard, A. C.

PY - 1984

Y1 - 1984

N2 - The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

AB - The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

UR - http://www.scopus.com/inward/record.url?scp=84913871147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84913871147&partnerID=8YFLogxK

U2 - 10.1109/EDL.1984.25970

DO - 10.1109/EDL.1984.25970

M3 - Article

AN - SCOPUS:84913871147

VL - 5

SP - 420

EP - 422

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 10

ER -