p-Channel (Al,Ga)As/GaAs Modulation-Doped Logic Gates

R. A. Kiehl, A. C. Gossard

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The operation of logic gates composed of modulation-doped field-effect transistors based on two-dimensional hole-gas conduction is reported for the first time. Direct coupled inverters fabricated on an MBE grown Be-doped (Al,Ga)As/GaAs wafer having a sheet density of 1.5 × 1012 cm–2 and a 77K mobility of 1800 cm2/V·s exhibit logic states of –0.25 and –0.98 V at 77K for a – 1-V bias. Propagation delays of 233.0 ps/gate are obtained at 77K in ring-oscillator circuits with a power dissipation of 0.31 mW/gate. Power-delay products as low as 9.1 fJ are also obtained.

Original languageEnglish (US)
Pages (from-to)420-422
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number10
DOIs
StatePublished - Oct 1984
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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