Oxygen vacancy-mediated room-temperature ferromagnetism in insulating cobalt-substituted SrTiO3 epitaxially integrated with silicon

Agham B. Posadas, Chandrima Mitra, Chungwei Lin, Ajit Dhamdhere, David Smith, Maxim Tsoi, Alexander A. Demkov

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Room-temperature ferromagnetic insulating behavior is demonstrated in cobalt-substituted SrTiO3 grown on silicon. Ferromagnetism is exhibited by films with a composition of 30-40% cobalt. Measurements of stoichiometry by x-ray photoelectron spectroscopy indicate Co replacing Ti with the concomitant creation of an approximately equal number of oxygen vacancies as the cobalt ions. First-principles modeling of this system shows that the observed local magnetic moment originates from a cobalt-oxygen vacancy complex with Co in the +2 valence state. The calculations also confirm the insulating nature of the material. The ability to deposit a room-temperature ferromagnetic insulator onto silicon may be useful for certain spintronics applications such as spin filters for spin-injection contacts.

Original languageEnglish (US)
Article number144422
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number14
DOIs
StatePublished - Apr 29 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Oxygen vacancy-mediated room-temperature ferromagnetism in insulating cobalt-substituted SrTiO<sub>3</sub> epitaxially integrated with silicon'. Together they form a unique fingerprint.

  • Cite this