Oxygen-induced segregation effects in sputter depth-profiling

Steven M. Hues, Peter Williams

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

In sputtering depth profiles of metal overlayers on silicon the metal signal decays exponentially beyond the metal-silicon interface. We have investigated the effect of oxygen on decay lengths for overlayers of carbon and eight metals (Mg, Ca, Ti, Cu, In, Ag, Au, Pb) on silicon. Typically, decay lengths for electropositive metals (Ca, Mg) decrease and those for electronegative metals (Cu, Ag, Au, Pb) increase in the presence of oxygen. The results are consistent with a model in which dilute impurities segregate towards or away from the oxygenated ion-bombarded surface depending on whether they form stronger, or weaker, bonds with oxygen than does silicon.

Original languageEnglish (US)
Pages (from-to)206-209
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume15
Issue number1-6
DOIs
StatePublished - Apr 1 1986

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Depth profiling
Metals
Silicon
Oxygen
oxygen
metals
silicon
decay
Sputtering
Carbon
sputtering
Impurities
Ions
impurities
carbon
profiles
ions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Oxygen-induced segregation effects in sputter depth-profiling. / Hues, Steven M.; Williams, Peter.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 15, No. 1-6, 01.04.1986, p. 206-209.

Research output: Contribution to journalArticle

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