TY - JOUR
T1 - Oxygen-induced segregation effects in sputter depth-profiling
AU - Hues, Steven M.
AU - Williams, Peter
N1 - Funding Information:
This work was supported by the National Science Foundation under Grant DMR 8206028. We thank John Wheatley and Jim Clark (ASU) for assistancew ith sample preparation.
PY - 1986/4/1
Y1 - 1986/4/1
N2 - In sputtering depth profiles of metal overlayers on silicon the metal signal decays exponentially beyond the metal-silicon interface. We have investigated the effect of oxygen on decay lengths for overlayers of carbon and eight metals (Mg, Ca, Ti, Cu, In, Ag, Au, Pb) on silicon. Typically, decay lengths for electropositive metals (Ca, Mg) decrease and those for electronegative metals (Cu, Ag, Au, Pb) increase in the presence of oxygen. The results are consistent with a model in which dilute impurities segregate towards or away from the oxygenated ion-bombarded surface depending on whether they form stronger, or weaker, bonds with oxygen than does silicon.
AB - In sputtering depth profiles of metal overlayers on silicon the metal signal decays exponentially beyond the metal-silicon interface. We have investigated the effect of oxygen on decay lengths for overlayers of carbon and eight metals (Mg, Ca, Ti, Cu, In, Ag, Au, Pb) on silicon. Typically, decay lengths for electropositive metals (Ca, Mg) decrease and those for electronegative metals (Cu, Ag, Au, Pb) increase in the presence of oxygen. The results are consistent with a model in which dilute impurities segregate towards or away from the oxygenated ion-bombarded surface depending on whether they form stronger, or weaker, bonds with oxygen than does silicon.
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U2 - 10.1016/0168-583X(86)90286-7
DO - 10.1016/0168-583X(86)90286-7
M3 - Article
AN - SCOPUS:0022040869
SN - 0168-583X
VL - 15
SP - 206
EP - 209
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 1-6
ER -