We report on an investigation of 'buried' oxygen implants formed by O** plus implantation at 400 keV and 3. 5 MeV into p-type CZ (100) wafers with a dopant density N//A approximately equals 10**1**5 cm** minus **3. Peak concentrations of 1 multiplied by 10**1**9 cm** minus **3 to 2 multiplied by 10**2**0 cm** minus **3. were investigated. Test devices were fabricated on implanted and annealed wafers using conventional wafer processing. TEM analysis reveals a well defined layer at 1 mu m with respect to the original implant surface containing a relatively high density of small precipitates and dislocation loops. DLTS measurements on diodes reveal 2 electron traps designated as E1 and E2. The experimental results provide direct evidence that ion implantation provides an effective method of introducing atomic oxygen in silicon at concentration exceeding its solid solubility during processing to produce a buried low lifetime region.