Oxygen atom induced deposition of silicon dioxide

Dimitri A. Levedakis, Gregory Raupp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Silicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323-623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixed absorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index of the deposited films was 1.466±0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

Original languageEnglish (US)
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages537-542
Number of pages6
ISBN (Print)1558991778
StatePublished - Jan 1 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Levedakis, D. A., & Raupp, G. (1993). Oxygen atom induced deposition of silicon dioxide. In Chemical Perspectives of Microelectronic Materials III (pp. 537-542). (Materials Research Society Symposium Proceedings; Vol. 282). Publ by Materials Research Society.