Oxygen atom induced deposition of silicon dioxide

Dimitri A. Levedakis, Gregory Raupp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Silicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323-623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixed absorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index of the deposited films was 1.466±0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages537-542
Number of pages6
Volume282
ISBN (Print)1558991778
StatePublished - 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

Fingerprint

Deposition rates
Silicon Dioxide
Reactive Oxygen Species
Silica
Oxygen
Atoms
Substrates
Microwaves
Plasmas
Infrared transmission
Silicon
Hydroxyl Radical
Refractive index
Fourier transforms
Activation energy
Mathematical models
Temperature
tetraethoxysilane

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Levedakis, D. A., & Raupp, G. (1993). Oxygen atom induced deposition of silicon dioxide. In Materials Research Society Symposium Proceedings (Vol. 282, pp. 537-542). Pittsburgh, PA, United States: Publ by Materials Research Society.

Oxygen atom induced deposition of silicon dioxide. / Levedakis, Dimitri A.; Raupp, Gregory.

Materials Research Society Symposium Proceedings. Vol. 282 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 537-542.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Levedakis, DA & Raupp, G 1993, Oxygen atom induced deposition of silicon dioxide. in Materials Research Society Symposium Proceedings. vol. 282, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 537-542, Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Boston, MA, USA, 11/30/92.
Levedakis DA, Raupp G. Oxygen atom induced deposition of silicon dioxide. In Materials Research Society Symposium Proceedings. Vol. 282. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 537-542
Levedakis, Dimitri A. ; Raupp, Gregory. / Oxygen atom induced deposition of silicon dioxide. Materials Research Society Symposium Proceedings. Vol. 282 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 537-542
@inproceedings{437835b0bece4379ad6fad1174ff9dd6,
title = "Oxygen atom induced deposition of silicon dioxide",
abstract = "Silicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323-623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixed absorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index of the deposited films was 1.466±0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.",
author = "Levedakis, {Dimitri A.} and Gregory Raupp",
year = "1993",
language = "English (US)",
isbn = "1558991778",
volume = "282",
pages = "537--542",
booktitle = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",

}

TY - GEN

T1 - Oxygen atom induced deposition of silicon dioxide

AU - Levedakis, Dimitri A.

AU - Raupp, Gregory

PY - 1993

Y1 - 1993

N2 - Silicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323-623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixed absorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index of the deposited films was 1.466±0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

AB - Silicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323-623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixed absorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index of the deposited films was 1.466±0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

UR - http://www.scopus.com/inward/record.url?scp=0027245347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027245347&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558991778

VL - 282

SP - 537

EP - 542

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

CY - Pittsburgh, PA, United States

ER -