Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology

B. Gao, H. W. Zhang, Shimeng Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, B. Yu, Y. Y. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

97 Citations (Scopus)

Abstract

For the first time, a new technical solution is presented to essentially improve the uniformity of oxide based RRAM devices by using material design methodology based on first principle calculations. The results indicate that doping of trivalent elements such as Al, La, or Ga into the tetravalent metal oxides such as HfO2 or ZrO2 effectively controls the formation of oxygen vacancy filaments along the doping sites, which helps improving the resistive switching (RS) behaviors in oxide based RRAM devices. The improved uniformity of forming and set/reset behaviors in the Al-doped HfO2 RRAM devices was demonstrated by both experiments and theoretical calculations, proving the validity of the proposed method.

Original languageEnglish (US)
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Pages30-31
Number of pages2
StatePublished - 2009
Externally publishedYes
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: Jun 16 2009Jun 18 2009

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period6/16/096/18/09

Fingerprint

Oxides
Doping (additives)
Oxygen vacancies
Chemical elements
Metals
RRAM
Experiments

Keywords

  • Resistive switching
  • RRAM
  • Uniformity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Gao, B., Zhang, H. W., Yu, S., Sun, B., Liu, L. F., Liu, X. Y., ... Wang, Y. Y. (2009). Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 30-31). [5200623]

Oxide-based RRAM : Uniformity improvement using a new material-oriented methodology. / Gao, B.; Zhang, H. W.; Yu, Shimeng; Sun, B.; Liu, L. F.; Liu, X. Y.; Wang, Y.; Han, R. Q.; Kang, J. F.; Yu, B.; Wang, Y. Y.

Digest of Technical Papers - Symposium on VLSI Technology. 2009. p. 30-31 5200623.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gao, B, Zhang, HW, Yu, S, Sun, B, Liu, LF, Liu, XY, Wang, Y, Han, RQ, Kang, JF, Yu, B & Wang, YY 2009, Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology. in Digest of Technical Papers - Symposium on VLSI Technology., 5200623, pp. 30-31, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 6/16/09.
Gao B, Zhang HW, Yu S, Sun B, Liu LF, Liu XY et al. Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology. In Digest of Technical Papers - Symposium on VLSI Technology. 2009. p. 30-31. 5200623
Gao, B. ; Zhang, H. W. ; Yu, Shimeng ; Sun, B. ; Liu, L. F. ; Liu, X. Y. ; Wang, Y. ; Han, R. Q. ; Kang, J. F. ; Yu, B. ; Wang, Y. Y. / Oxide-based RRAM : Uniformity improvement using a new material-oriented methodology. Digest of Technical Papers - Symposium on VLSI Technology. 2009. pp. 30-31
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