Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

B. Gao, S. Yu, N. Xu, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, B. Yu, Y. Y. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

51 Scopus citations

Abstract

This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.j.

Original languageEnglish (US)
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: Dec 15 2008Dec 17 2008

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period12/15/0812/17/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Gao, B., Yu, S., Xu, N., Liu, L. F., Sun, B., Liu, X. Y., Han, R. Q., Kang, J. F., Yu, B., & Wang, Y. Y. (2008). Oxide-based RRAM switching mechanism: A new ion-transport-recombination model. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796751] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796751