@inproceedings{5582c0f0bdf14856888b59d001d6e063,
title = "Oxide-based RRAM switching mechanism: A new ion-transport-recombination model",
abstract = "This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.j.",
author = "B. Gao and S. Yu and N. Xu and Liu, {L. F.} and B. Sun and Liu, {X. Y.} and Han, {R. Q.} and Kang, {J. F.} and B. Yu and Wang, {Y. Y.}",
year = "2008",
doi = "10.1109/IEDM.2008.4796751",
language = "English (US)",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}