Overshoot velocity in ultra-broadband THz studies in GaAs and InP

Marco Saraniti; Y. Hu; Stephen Goodnick; S. J. Wigger

doi:10.1016/S0921-4526(01)01377-1

Overshoot velocity in ultra-broadband THz studies in GaAs and InP

Marco Saraniti, Y. Hu, Stephen Goodnick, S. J. Wigger

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has been motivated by the recent availability of experimental measures of the THz radiation generated by transient acceleration of photogenerated charge carriers in pin diode structures. The fullband code used in this study includes the full energy-momentum dispersion relation of electrons and holes as well as the full dispersion for the relevant phonons. Here we use this code for the simulation of high-field transient transport in bulk GaAs, InP, and for the experimental pin structure, where favorable comparison is found with the velocities measured from the transient THz radiatn after ultrafast excitation.

Original language	English (US)
Pages (from-to)	162-165
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01377-1
State	Published - Mar 2002

Keywords

Charge transport modeling
GaAs
InP
Monte Carlo

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)01377-1

Cite this

@article{77e331b1481640afa29a2a9b633efe46,

title = "Overshoot velocity in ultra-broadband THz studies in GaAs and InP",

abstract = "We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has been motivated by the recent availability of experimental measures of the THz radiation generated by transient acceleration of photogenerated charge carriers in pin diode structures. The fullband code used in this study includes the full energy-momentum dispersion relation of electrons and holes as well as the full dispersion for the relevant phonons. Here we use this code for the simulation of high-field transient transport in bulk GaAs, InP, and for the experimental pin structure, where favorable comparison is found with the velocities measured from the transient THz radiatn after ultrafast excitation.",

keywords = "Charge transport modeling, GaAs, InP, Monte Carlo",

author = "Marco Saraniti and Y. Hu and Stephen Goodnick and Wigger, {S. J.}",

note = "Funding Information: This work has been partially supported by the National Science Foundation Grant ECS-9976484.",

year = "2002",

month = mar,

doi = "10.1016/S0921-4526(01)01377-1",

language = "English (US)",

volume = "314",

pages = "162--165",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Overshoot velocity in ultra-broadband THz studies in GaAs and InP

AU - Saraniti, Marco

AU - Hu, Y.

AU - Goodnick, Stephen

AU - Wigger, S. J.

N1 - Funding Information: This work has been partially supported by the National Science Foundation Grant ECS-9976484.

PY - 2002/3

Y1 - 2002/3

N2 - We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has been motivated by the recent availability of experimental measures of the THz radiation generated by transient acceleration of photogenerated charge carriers in pin diode structures. The fullband code used in this study includes the full energy-momentum dispersion relation of electrons and holes as well as the full dispersion for the relevant phonons. Here we use this code for the simulation of high-field transient transport in bulk GaAs, InP, and for the experimental pin structure, where favorable comparison is found with the velocities measured from the transient THz radiatn after ultrafast excitation.

AB - We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has been motivated by the recent availability of experimental measures of the THz radiation generated by transient acceleration of photogenerated charge carriers in pin diode structures. The fullband code used in this study includes the full energy-momentum dispersion relation of electrons and holes as well as the full dispersion for the relevant phonons. Here we use this code for the simulation of high-field transient transport in bulk GaAs, InP, and for the experimental pin structure, where favorable comparison is found with the velocities measured from the transient THz radiatn after ultrafast excitation.

KW - Charge transport modeling

KW - GaAs

KW - InP

KW - Monte Carlo

UR - http://www.scopus.com/inward/record.url?scp=0036503541&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036503541&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)01377-1

DO - 10.1016/S0921-4526(01)01377-1

M3 - Article

AN - SCOPUS:0036503541

SN - 0921-4526

VL - 314

SP - 162

EP - 165

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

Overshoot velocity in ultra-broadband THz studies in GaAs and InP

Abstract

Keywords

ASJC Scopus subject areas

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