Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II

Effects of underlying layers and growth chamber conditions

Jeomoh Kim, Zachary Lochner, Mi Hee Ji, Suk Choi, Hee Jin Kim, Jin Soo Kim, Russell D. Dupuis, Alec M. Fischer, Reid Juday, Yu Huang, Ti Li, Jingyi Y. Huang, Fernando Ponce, Jae Hyun Ryou

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We systematically study the origins and mechanisms for unintentional incorporation of gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto-incorporation of Ga have been investigated by using different underlying layers, regrown layers, and growth chamber conditions. It is shown that Ga-containing deposition on a wafer susceptor/carrier and on surrounding surfaces of uncooled parts in a growth chamber can be responsible for Ga in the InAl(Ga)N layers, while a GaN underlying layer below an InAl(Ga)N layer does not contribute to the auto-incorporation of Ga in the InAl(Ga)N layers. Especially, the Ga-containing deposition on the surfaces inside the chamber is believed to be the dominant source of auto-incorporated Ga, possibly due to the high vapor pressure of a liquid phase as a result of eutectic system formation between indium (In) and Ga. The pressure of liquid-phase Ga, p Ga=~3.67×10-4 Torr, can be significant as compared to precursor partial pressures with p TMAl=3.7×10-4 Torr and p TMIn=2.4×10-5 Torr. In addition, magnesium (Mg) or magnesium precursor (Cp2Mg) in the growth chamber is shown to promote the auto-incorporation of Ga in the InAl(Ga)N layers.

Original languageEnglish (US)
Pages (from-to)143-149
Number of pages7
JournalJournal of Crystal Growth
Volume388
DOIs
StatePublished - 2014

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phytotrons
Gallium
Epitaxial growth
gallium
chambers
Indium
Magnesium
indium
magnesium
liquid phases
Liquids

Keywords

  • A1. Characterization
  • A1. Growth models
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II : Effects of underlying layers and growth chamber conditions. / Kim, Jeomoh; Lochner, Zachary; Ji, Mi Hee; Choi, Suk; Kim, Hee Jin; Kim, Jin Soo; Dupuis, Russell D.; Fischer, Alec M.; Juday, Reid; Huang, Yu; Li, Ti; Huang, Jingyi Y.; Ponce, Fernando; Ryou, Jae Hyun.

In: Journal of Crystal Growth, Vol. 388, 2014, p. 143-149.

Research output: Contribution to journalArticle

Kim, J, Lochner, Z, Ji, MH, Choi, S, Kim, HJ, Kim, JS, Dupuis, RD, Fischer, AM, Juday, R, Huang, Y, Li, T, Huang, JY, Ponce, F & Ryou, JH 2014, 'Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions', Journal of Crystal Growth, vol. 388, pp. 143-149. https://doi.org/10.1016/j.jcrysgro.2013.09.046
Kim, Jeomoh ; Lochner, Zachary ; Ji, Mi Hee ; Choi, Suk ; Kim, Hee Jin ; Kim, Jin Soo ; Dupuis, Russell D. ; Fischer, Alec M. ; Juday, Reid ; Huang, Yu ; Li, Ti ; Huang, Jingyi Y. ; Ponce, Fernando ; Ryou, Jae Hyun. / Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II : Effects of underlying layers and growth chamber conditions. In: Journal of Crystal Growth. 2014 ; Vol. 388. pp. 143-149.
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AU - Ji, Mi Hee

AU - Choi, Suk

AU - Kim, Hee Jin

AU - Kim, Jin Soo

AU - Dupuis, Russell D.

AU - Fischer, Alec M.

AU - Juday, Reid

AU - Huang, Yu

AU - Li, Ti

AU - Huang, Jingyi Y.

AU - Ponce, Fernando

AU - Ryou, Jae Hyun

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AB - We systematically study the origins and mechanisms for unintentional incorporation of gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto-incorporation of Ga have been investigated by using different underlying layers, regrown layers, and growth chamber conditions. It is shown that Ga-containing deposition on a wafer susceptor/carrier and on surrounding surfaces of uncooled parts in a growth chamber can be responsible for Ga in the InAl(Ga)N layers, while a GaN underlying layer below an InAl(Ga)N layer does not contribute to the auto-incorporation of Ga in the InAl(Ga)N layers. Especially, the Ga-containing deposition on the surfaces inside the chamber is believed to be the dominant source of auto-incorporated Ga, possibly due to the high vapor pressure of a liquid phase as a result of eutectic system formation between indium (In) and Ga. The pressure of liquid-phase Ga, p Ga=~3.67×10-4 Torr, can be significant as compared to precursor partial pressures with p TMAl=3.7×10-4 Torr and p TMIn=2.4×10-5 Torr. In addition, magnesium (Mg) or magnesium precursor (Cp2Mg) in the growth chamber is shown to promote the auto-incorporation of Ga in the InAl(Ga)N layers.

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