Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I

Growth of AlInN on AlN and effects of prior coating

Suk Choi, Hee Jin Kim, Zachary Lochner, Jeomoh Kim, Russell D. Dupuis, Alec M. Fischer, Reid Juday, Yu Huang, Ti Li, Jingyi Y. Huang, Fernando Ponce, Jae Hyun Ryou

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free underlying layers and wafer carrier grown by metalorganic chemical vapor deposition, even though the Ga precursor was not introduced during the growth. The Al(Ga)InN layers were characterized by high-resolution X-ray diffraction and Rutherford backscattering spectrometry. The mole fraction of Ga in the Al(Ga)InN layers showed strong dependence on conditions of the growth chamber, making it difficult to maintain controlled alloy compositions only by growth process parameters. Also, Ga incorporation was not observed under the same growth parameters and conditions, when the indium (In) precursor was absent. The formation of In-Ga eutectic system between metallic Ga from the deposition on the chamber surrounding surfaces and adsorbed In is suggested as a possible pathway for the Ga incorporation. Finally, we performed an intentional chamber coating process prior to growth of AlInN to achieve repeatable Al(Ga)InN growth with stable alloy compositions.

Original languageEnglish (US)
Pages (from-to)137-142
Number of pages6
JournalJournal of Crystal Growth
Volume388
DOIs
StatePublished - 2014

Fingerprint

Gallium
Epitaxial growth
gallium
coatings
Coatings
Indium
indium
chambers
phytotrons
Rutherford backscattering spectroscopy
Metallorganic chemical vapor deposition
Chemical analysis
eutectics
Eutectics
Spectrometry
metalorganic chemical vapor deposition
coating
backscattering
wafers

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I : Growth of AlInN on AlN and effects of prior coating. / Choi, Suk; Kim, Hee Jin; Lochner, Zachary; Kim, Jeomoh; Dupuis, Russell D.; Fischer, Alec M.; Juday, Reid; Huang, Yu; Li, Ti; Huang, Jingyi Y.; Ponce, Fernando; Ryou, Jae Hyun.

In: Journal of Crystal Growth, Vol. 388, 2014, p. 137-142.

Research output: Contribution to journalArticle

Choi, Suk ; Kim, Hee Jin ; Lochner, Zachary ; Kim, Jeomoh ; Dupuis, Russell D. ; Fischer, Alec M. ; Juday, Reid ; Huang, Yu ; Li, Ti ; Huang, Jingyi Y. ; Ponce, Fernando ; Ryou, Jae Hyun. / Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I : Growth of AlInN on AlN and effects of prior coating. In: Journal of Crystal Growth. 2014 ; Vol. 388. pp. 137-142.
@article{ac549e45419542baabe9cc0eeda3f2ed,
title = "Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating",
abstract = "We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free underlying layers and wafer carrier grown by metalorganic chemical vapor deposition, even though the Ga precursor was not introduced during the growth. The Al(Ga)InN layers were characterized by high-resolution X-ray diffraction and Rutherford backscattering spectrometry. The mole fraction of Ga in the Al(Ga)InN layers showed strong dependence on conditions of the growth chamber, making it difficult to maintain controlled alloy compositions only by growth process parameters. Also, Ga incorporation was not observed under the same growth parameters and conditions, when the indium (In) precursor was absent. The formation of In-Ga eutectic system between metallic Ga from the deposition on the chamber surrounding surfaces and adsorbed In is suggested as a possible pathway for the Ga incorporation. Finally, we performed an intentional chamber coating process prior to growth of AlInN to achieve repeatable Al(Ga)InN growth with stable alloy compositions.",
keywords = "A3. Metalorganic chemical vapor deposition, B2. Semiconducting III-V materials",
author = "Suk Choi and Kim, {Hee Jin} and Zachary Lochner and Jeomoh Kim and Dupuis, {Russell D.} and Fischer, {Alec M.} and Reid Juday and Yu Huang and Ti Li and Huang, {Jingyi Y.} and Fernando Ponce and Ryou, {Jae Hyun}",
year = "2014",
doi = "10.1016/j.jcrysgro.2013.10.006",
language = "English (US)",
volume = "388",
pages = "137--142",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I

T2 - Growth of AlInN on AlN and effects of prior coating

AU - Choi, Suk

AU - Kim, Hee Jin

AU - Lochner, Zachary

AU - Kim, Jeomoh

AU - Dupuis, Russell D.

AU - Fischer, Alec M.

AU - Juday, Reid

AU - Huang, Yu

AU - Li, Ti

AU - Huang, Jingyi Y.

AU - Ponce, Fernando

AU - Ryou, Jae Hyun

PY - 2014

Y1 - 2014

N2 - We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free underlying layers and wafer carrier grown by metalorganic chemical vapor deposition, even though the Ga precursor was not introduced during the growth. The Al(Ga)InN layers were characterized by high-resolution X-ray diffraction and Rutherford backscattering spectrometry. The mole fraction of Ga in the Al(Ga)InN layers showed strong dependence on conditions of the growth chamber, making it difficult to maintain controlled alloy compositions only by growth process parameters. Also, Ga incorporation was not observed under the same growth parameters and conditions, when the indium (In) precursor was absent. The formation of In-Ga eutectic system between metallic Ga from the deposition on the chamber surrounding surfaces and adsorbed In is suggested as a possible pathway for the Ga incorporation. Finally, we performed an intentional chamber coating process prior to growth of AlInN to achieve repeatable Al(Ga)InN growth with stable alloy compositions.

AB - We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free underlying layers and wafer carrier grown by metalorganic chemical vapor deposition, even though the Ga precursor was not introduced during the growth. The Al(Ga)InN layers were characterized by high-resolution X-ray diffraction and Rutherford backscattering spectrometry. The mole fraction of Ga in the Al(Ga)InN layers showed strong dependence on conditions of the growth chamber, making it difficult to maintain controlled alloy compositions only by growth process parameters. Also, Ga incorporation was not observed under the same growth parameters and conditions, when the indium (In) precursor was absent. The formation of In-Ga eutectic system between metallic Ga from the deposition on the chamber surrounding surfaces and adsorbed In is suggested as a possible pathway for the Ga incorporation. Finally, we performed an intentional chamber coating process prior to growth of AlInN to achieve repeatable Al(Ga)InN growth with stable alloy compositions.

KW - A3. Metalorganic chemical vapor deposition

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=84903998279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903998279&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.10.006

DO - 10.1016/j.jcrysgro.2013.10.006

M3 - Article

VL - 388

SP - 137

EP - 142

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -