Origins of total-dose response variability in linear bipolar microcircuits

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J. F. Krieg, M. C. Maher

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

LM111 voltage comparators exhibit a wide range of total-dose-induced degradation. Simulations show this variability may be a natural consequence of the low base doping of the substrate PNP (SPNP) input transistors. Low base doping increases the SPNPs collector to base breakdown voltage, current gain, and densities. The build-up of oxide trapped charge (N OT) and interface traps (N IT) is shown to be a function of pre-irradiation bakes. Experimental data indicate that, despite its structural similarities to the LM111, irradiated input transistors of the LM124 operational amplifier do not exhibit the same sensitivity to variations in pre-irradiation thermal cycles. Further disparities in LM111 and LM124 responses may result from a difference in the oxide defect build-up in the two part types. Variations in processing, packaging, and circuit effects are suggested as potential explanations.

Original languageEnglish (US)
Pages (from-to)2342-2349
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number6 III
DOIs
StatePublished - Dec 2000
Externally publishedYes
Event2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States
Duration: Jul 24 2000Jul 28 2000

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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