Origins of hydrogen that passivates bulk defects in silicon heterojunction solar cells

Chang Sun, William Weigand, Jianwei Shi, Zhengshan Yu, Rabin Basnet, Sieu Pheng Phang, Zachary C. Holman, Daniel Maconald

Research output: Contribution to journalArticle

Abstract

Silicon heterojunction solar cell fabrication incorporates a significant amount of hydrogen into the silicon wafer bulk, and the amount of injected hydrogen is comparable to that introduced by silicon nitride films during a high-temperature firing step. In this work, the origins of the hydrogen injected during heterojunction cell processing have been identified. We demonstrate that the hydrogen plasma treatment that is routinely included to improve surface passivation considerably increases the hydrogen concentration in the wafers. We also show that the hydrogenated amorphous silicon i/p+ stack is more effective than the i/n+ stack for bulk hydrogen incorporation, and both are more effective than intrinsic films alone.

Original languageEnglish (US)
JournalApplied Physics Letters
Volume115
Issue number25
DOIs
StatePublished - Dec 16 2019

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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