Origin of the defect structures in oxygen-implanted silicon-on-insulator material

D. Venables, Stephen Krause, J. D. Lee, J. C. Park, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A discussion of the origin and characteristics of SIMOX defect structures is presented in this study. Defect types are categorized as through thickness defects, partial thickness defects and stacking fault pyramids. Defect densities are controlled by processing methods.

Original languageEnglish (US)
Title of host publicationProceedings - Annual Meeting, Microscopy Society of America
PublisherPubl by San Francisco Press Inc
Pages1108-1109
Number of pages2
StatePublished - 1993
EventProceedings of the 51st Annual Meeting Microscopy Society of America - Cincinnati, OH, USA
Duration: Aug 1 1993Aug 6 1993

Other

OtherProceedings of the 51st Annual Meeting Microscopy Society of America
CityCincinnati, OH, USA
Period8/1/938/6/93

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Venables, D., Krause, S., Lee, J. D., Park, J. C., & Roitman, P. (1993). Origin of the defect structures in oxygen-implanted silicon-on-insulator material. In Proceedings - Annual Meeting, Microscopy Society of America (pp. 1108-1109). Publ by San Francisco Press Inc.