Origin of magnetization decay in spin-dependent tunnel junctions

Martha McCartney, Rafal E. Dunin-Borkowski, Michael R. Scheinfein, David Smith, Savas Gider, Stuart S P Parkin

Research output: Contribution to journalArticle

39 Scopus citations

Abstract

Spin-dependent tunnel junctions based on magnetically hard and soft ferromagnetic layers separated by a thin insulating barrier have emerged as prime candidates for information storage. However, the observed instability of the magnetically hard reference layer, leading to magnetization decay during field cycling of the adjacent soft layer, is a serious concern for future device applications. Using Lorentz electron microscopy and micromagnetic simulations, the hard-layer decay was found to result from large fringing fields surrounding magnetic domain walls in the magnetically soft layer. The formation and motion of these walls causes statistical flipping of magnetic moments in randomly oriented grains of the hard layer, with a progressive trend toward disorder and eventual demagnetization.

Original languageEnglish (US)
Pages (from-to)1337-1340
Number of pages4
JournalScience
Volume286
Issue number5443
DOIs
StatePublished - Nov 12 1999

ASJC Scopus subject areas

  • General

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    McCartney, M., Dunin-Borkowski, R. E., Scheinfein, M. R., Smith, D., Gider, S., & Parkin, S. S. P. (1999). Origin of magnetization decay in spin-dependent tunnel junctions. Science, 286(5443), 1337-1340. https://doi.org/10.1126/science.286.5443.1337