Orientation dependence of CdTe/Si grown by MBE

L. A. Almeida, Y. P. Chen, J. P. Faurie, David Smith, S. C Y Tsen, S. Sivananthan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study CdTe (111)B was grown by molecular beam epitaxy on vicinal Si(001) substrates, with a variety of substrate tilt angles (θ), and tilt directions (φ) relative to [110]. Layer quality, and content of double-domain and microtwin defects were evaluated by double crystal rocking curve (DCRC) full width at half maximum (FWHM) and x-ray diffraction, respectively. Transmission electron microscopy (TEM) was used to study interface quality and the nature of structural defects as a function of epilayer thickness. In the present investigation, substrate preparation and growth conditions, particularly initiation conditions, are correlated with Si (001) tilt. It has been found that oxide desorption processes can depend strongly on θ, especially for larger values of θ (> 4 0). Currently, we routinely produce single domain, twin-free CdTe(111)B epilayers on vicinal Si (001) substrates.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages343-348
Number of pages6
Volume399
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Almeida, L. A., Chen, Y. P., Faurie, J. P., Smith, D., Tsen, S. C. Y., & Sivananthan, S. (1996). Orientation dependence of CdTe/Si grown by MBE. In Materials Research Society Symposium - Proceedings (Vol. 399, pp. 343-348). Materials Research Society.