Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films

John Kouvetakis, D. Nesting, M. O'Keeffe, David Smith

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

An ordered GeSi2 structure has been observed in layers of approximate composition GeSi2Cx grown epitaxially on Si. Except for regions very close to the interface, the ordered phase forms throughout the layer and is readily identified by high-resolution electron microscopy and electron diffraction. The structure is formed by Ge-Si-Si ordering along the diamond [111] direction to yield a new structure with P3m1 symmetry. Analogous (but not as extensive) ordering in the Ge2SiCx (x = 6%) system is also observed. The role of carbon, which is incorporated into the material as Si4C tetrahedra, is used to explain the formation of these novel structures.

Original languageEnglish (US)
Pages (from-to)1396-1401
Number of pages6
JournalChemistry of Materials
Volume10
Issue number5
DOIs
StatePublished - May 1998

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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