Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films

John Kouvetakis; D. Nesting; M. O'Keeffe; David Smith

doi:10.1021/cm970800h

Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films

John Kouvetakis, D. Nesting, M. O'Keeffe, David Smith

Research output: Contribution to journal › Article › peer-review

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Abstract

An ordered GeSi₂ structure has been observed in layers of approximate composition GeSi₂C_x grown epitaxially on Si. Except for regions very close to the interface, the ordered phase forms throughout the layer and is readily identified by high-resolution electron microscopy and electron diffraction. The structure is formed by Ge-Si-Si ordering along the diamond [111] direction to yield a new structure with P3m1 symmetry. Analogous (but not as extensive) ordering in the Ge₂SiC_x (x = 6%) system is also observed. The role of carbon, which is incorporated into the material as Si₄C tetrahedra, is used to explain the formation of these novel structures.

Original language	English (US)
Pages (from-to)	1396-1401
Number of pages	6
Journal	Chemistry of Materials
Volume	10
Issue number	5
DOIs	https://doi.org/10.1021/cm970800h
State	Published - May 1998

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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@article{1aeb1d9905004e598b417961a6d2a828,

title = "Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films",

abstract = "An ordered GeSi2 structure has been observed in layers of approximate composition GeSi2Cx grown epitaxially on Si. Except for regions very close to the interface, the ordered phase forms throughout the layer and is readily identified by high-resolution electron microscopy and electron diffraction. The structure is formed by Ge-Si-Si ordering along the diamond [111] direction to yield a new structure with P3m1 symmetry. Analogous (but not as extensive) ordering in the Ge2SiCx (x = 6%) system is also observed. The role of carbon, which is incorporated into the material as Si4C tetrahedra, is used to explain the formation of these novel structures.",

author = "John Kouvetakis and D. Nesting and M. O'Keeffe and David Smith",

year = "1998",

month = may,

doi = "10.1021/cm970800h",

language = "English (US)",

volume = "10",

pages = "1396--1401",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films

AU - Kouvetakis, John

AU - Nesting, D.

AU - O'Keeffe, M.

AU - Smith, David

PY - 1998/5

Y1 - 1998/5

N2 - An ordered GeSi2 structure has been observed in layers of approximate composition GeSi2Cx grown epitaxially on Si. Except for regions very close to the interface, the ordered phase forms throughout the layer and is readily identified by high-resolution electron microscopy and electron diffraction. The structure is formed by Ge-Si-Si ordering along the diamond [111] direction to yield a new structure with P3m1 symmetry. Analogous (but not as extensive) ordering in the Ge2SiCx (x = 6%) system is also observed. The role of carbon, which is incorporated into the material as Si4C tetrahedra, is used to explain the formation of these novel structures.

AB - An ordered GeSi2 structure has been observed in layers of approximate composition GeSi2Cx grown epitaxially on Si. Except for regions very close to the interface, the ordered phase forms throughout the layer and is readily identified by high-resolution electron microscopy and electron diffraction. The structure is formed by Ge-Si-Si ordering along the diamond [111] direction to yield a new structure with P3m1 symmetry. Analogous (but not as extensive) ordering in the Ge2SiCx (x = 6%) system is also observed. The role of carbon, which is incorporated into the material as Si4C tetrahedra, is used to explain the formation of these novel structures.

UR - http://www.scopus.com/inward/record.url?scp=0542422667&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0542422667&partnerID=8YFLogxK

U2 - 10.1021/cm970800h

DO - 10.1021/cm970800h

M3 - Article

AN - SCOPUS:0542422667

SN - 0897-4756

VL - 10

SP - 1396

EP - 1401

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 5

ER -

Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films

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