Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

S. Myhajlenko, A. Bell, Fernando Ponce, J. L. Edwards, Y. Wei, B. Craigo, D. Convey, H. Li, R. Liu, J. Kulik

Research output: Contribution to journalArticle

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Abstract

We have investigated the optoelectronic characteristics of bulk single-crystal SrTi O3 (STO) and epitaxial STO on Si by photoluminescence and cathodoluminescence (CL) techniques. In particular, we have explored to what extent these techniques can offer information about crystal quality. We have complemented these observations with atomic force microscopy, transmission electron microscopy (TEM), and micro-Raman measurements. Panchromatic CL imaging of bulk STO revealed contrast features associated with growth-related striations, extended defects, and mechanical damage. CL imaging of undoped high-resistivity substrates was limited by beam charging effects. The weak nature of the CL signal from epitaxial STO (relative to bulk material) made it very difficult to visualize any features by analog detection. On the other hand, spectrally resolved CL measurements of epitaxial STO using single-photon counting techniques, revealed sensitivity to the defect content and film quality across a 3-in wafer. Preliminary results indicate a qualitative correlation in the room-temperature near band-edge luminescence properties (3.2-3.5 eV) and crystalline quality as determined by micro-Raman spectroscopy and TEM.

Original languageEnglish (US)
Article number014101
JournalJournal of Applied Physics
Volume97
Issue number1
DOIs
StatePublished - Jan 1 2005

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cathodoluminescence
microstructure
transmission electron microscopy
striation
defects
charging
counting
Raman spectroscopy
atomic force microscopy
wafers
analogs
luminescence
damage
photoluminescence
electrical resistivity
sensitivity
single crystals
photons
room temperature
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Myhajlenko, S., Bell, A., Ponce, F., Edwards, J. L., Wei, Y., Craigo, B., ... Kulik, J. (2005). Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si. Journal of Applied Physics, 97(1), [014101]. https://doi.org/10.1063/1.1821643

Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si. / Myhajlenko, S.; Bell, A.; Ponce, Fernando; Edwards, J. L.; Wei, Y.; Craigo, B.; Convey, D.; Li, H.; Liu, R.; Kulik, J.

In: Journal of Applied Physics, Vol. 97, No. 1, 014101, 01.01.2005.

Research output: Contribution to journalArticle

Myhajlenko, S, Bell, A, Ponce, F, Edwards, JL, Wei, Y, Craigo, B, Convey, D, Li, H, Liu, R & Kulik, J 2005, 'Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si', Journal of Applied Physics, vol. 97, no. 1, 014101. https://doi.org/10.1063/1.1821643
Myhajlenko, S. ; Bell, A. ; Ponce, Fernando ; Edwards, J. L. ; Wei, Y. ; Craigo, B. ; Convey, D. ; Li, H. ; Liu, R. ; Kulik, J. / Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 1.
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