Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

S. Myhajlenko; A. Bell; Fernando Ponce; J. L. Edwards; Y. Wei; B. Craigo; D. Convey; H. Li; R. Liu; J. Kulik

doi:10.1063/1.1821643

Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

S. Myhajlenko, A. Bell, Fernando Ponce, J. L. Edwards, Y. Wei, B. Craigo, D. Convey, H. Li, R. Liu, J. Kulik

Physics

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We have investigated the optoelectronic characteristics of bulk single-crystal SrTi O3 (STO) and epitaxial STO on Si by photoluminescence and cathodoluminescence (CL) techniques. In particular, we have explored to what extent these techniques can offer information about crystal quality. We have complemented these observations with atomic force microscopy, transmission electron microscopy (TEM), and micro-Raman measurements. Panchromatic CL imaging of bulk STO revealed contrast features associated with growth-related striations, extended defects, and mechanical damage. CL imaging of undoped high-resistivity substrates was limited by beam charging effects. The weak nature of the CL signal from epitaxial STO (relative to bulk material) made it very difficult to visualize any features by analog detection. On the other hand, spectrally resolved CL measurements of epitaxial STO using single-photon counting techniques, revealed sensitivity to the defect content and film quality across a 3-in wafer. Preliminary results indicate a qualitative correlation in the room-temperature near band-edge luminescence properties (3.2-3.5 eV) and crystalline quality as determined by micro-Raman spectroscopy and TEM.

Original language	English (US)
Article number	014101
Journal	Journal of Applied Physics
Volume	97
Issue number	1
DOIs	https://doi.org/10.1063/1.1821643
State	Published - Jan 1 2005

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1821643

Cite this

@article{df2768c87e684c9497fb3c1c0d6b248a,

title = "Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si",

abstract = "We have investigated the optoelectronic characteristics of bulk single-crystal SrTi O3 (STO) and epitaxial STO on Si by photoluminescence and cathodoluminescence (CL) techniques. In particular, we have explored to what extent these techniques can offer information about crystal quality. We have complemented these observations with atomic force microscopy, transmission electron microscopy (TEM), and micro-Raman measurements. Panchromatic CL imaging of bulk STO revealed contrast features associated with growth-related striations, extended defects, and mechanical damage. CL imaging of undoped high-resistivity substrates was limited by beam charging effects. The weak nature of the CL signal from epitaxial STO (relative to bulk material) made it very difficult to visualize any features by analog detection. On the other hand, spectrally resolved CL measurements of epitaxial STO using single-photon counting techniques, revealed sensitivity to the defect content and film quality across a 3-in wafer. Preliminary results indicate a qualitative correlation in the room-temperature near band-edge luminescence properties (3.2-3.5 eV) and crystalline quality as determined by micro-Raman spectroscopy and TEM.",

author = "S. Myhajlenko and A. Bell and Fernando Ponce and Edwards, {J. L.} and Y. Wei and B. Craigo and D. Convey and H. Li and R. Liu and J. Kulik",

note = "Funding Information: One of the authors (S.M.) is grateful to both Arizona State University and Motorola for the support and opportunity to pursue this research topic while on sabbatical leave. Another author (A.B.) is supported by a grant from Nichia Corporation. The authors acknowledge Gordon Tam and Lorraine Johnston for assistance with TEM sample preparation, and Kathy Palmer for cross-sectional FESEM.",

year = "2005",

month = jan,

day = "1",

doi = "10.1063/1.1821643",

language = "English (US)",

volume = "97",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

AU - Myhajlenko, S.

AU - Bell, A.

AU - Ponce, Fernando

AU - Edwards, J. L.

AU - Wei, Y.

AU - Craigo, B.

AU - Convey, D.

AU - Li, H.

AU - Liu, R.

AU - Kulik, J.

N1 - Funding Information: One of the authors (S.M.) is grateful to both Arizona State University and Motorola for the support and opportunity to pursue this research topic while on sabbatical leave. Another author (A.B.) is supported by a grant from Nichia Corporation. The authors acknowledge Gordon Tam and Lorraine Johnston for assistance with TEM sample preparation, and Kathy Palmer for cross-sectional FESEM.

PY - 2005/1/1

Y1 - 2005/1/1

N2 - We have investigated the optoelectronic characteristics of bulk single-crystal SrTi O3 (STO) and epitaxial STO on Si by photoluminescence and cathodoluminescence (CL) techniques. In particular, we have explored to what extent these techniques can offer information about crystal quality. We have complemented these observations with atomic force microscopy, transmission electron microscopy (TEM), and micro-Raman measurements. Panchromatic CL imaging of bulk STO revealed contrast features associated with growth-related striations, extended defects, and mechanical damage. CL imaging of undoped high-resistivity substrates was limited by beam charging effects. The weak nature of the CL signal from epitaxial STO (relative to bulk material) made it very difficult to visualize any features by analog detection. On the other hand, spectrally resolved CL measurements of epitaxial STO using single-photon counting techniques, revealed sensitivity to the defect content and film quality across a 3-in wafer. Preliminary results indicate a qualitative correlation in the room-temperature near band-edge luminescence properties (3.2-3.5 eV) and crystalline quality as determined by micro-Raman spectroscopy and TEM.

AB - We have investigated the optoelectronic characteristics of bulk single-crystal SrTi O3 (STO) and epitaxial STO on Si by photoluminescence and cathodoluminescence (CL) techniques. In particular, we have explored to what extent these techniques can offer information about crystal quality. We have complemented these observations with atomic force microscopy, transmission electron microscopy (TEM), and micro-Raman measurements. Panchromatic CL imaging of bulk STO revealed contrast features associated with growth-related striations, extended defects, and mechanical damage. CL imaging of undoped high-resistivity substrates was limited by beam charging effects. The weak nature of the CL signal from epitaxial STO (relative to bulk material) made it very difficult to visualize any features by analog detection. On the other hand, spectrally resolved CL measurements of epitaxial STO using single-photon counting techniques, revealed sensitivity to the defect content and film quality across a 3-in wafer. Preliminary results indicate a qualitative correlation in the room-temperature near band-edge luminescence properties (3.2-3.5 eV) and crystalline quality as determined by micro-Raman spectroscopy and TEM.

UR - http://www.scopus.com/inward/record.url?scp=19944431134&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944431134&partnerID=8YFLogxK

U2 - 10.1063/1.1821643

DO - 10.1063/1.1821643

M3 - Article

AN - SCOPUS:19944431134

SN - 0021-8979

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 014101

ER -

Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this