TY - GEN
T1 - OPTODET - Tool to model LWIR and MWIR region for HgCdTe photodetectors
AU - Muralidharan, Pradyumna
AU - Wijewarnasuriya, Priyalal S.
AU - Vasileska, Dragica
PY - 2011
Y1 - 2011
N2 - The tool OPTODET has been developed to investigate and explain the device characteristics of p +-n HgCdTe Photodetector at low temperatures. In this paper the performance of narrow band gap Hg 1-xCd xTe (x=0.225) at 78 K and wide band gap Hg 1-xCd xTe (x=0.3) at 250 K have been analyzed. Our theoretical model considers complete Fermi-Dirac statistics and all the major recombination mechanisms. The performance of the device has been studied and simulated as a function of parameters such as doping and temperature. The dark current - voltage characteristics have been simulated and analyzed theoretically. Dark Current as low as I D=10 -10 was obtained at 78 K. For x=0.225, a peak detectivity of 1.558 × 10 11 mHz 1/2/W was obtained.
AB - The tool OPTODET has been developed to investigate and explain the device characteristics of p +-n HgCdTe Photodetector at low temperatures. In this paper the performance of narrow band gap Hg 1-xCd xTe (x=0.225) at 78 K and wide band gap Hg 1-xCd xTe (x=0.3) at 250 K have been analyzed. Our theoretical model considers complete Fermi-Dirac statistics and all the major recombination mechanisms. The performance of the device has been studied and simulated as a function of parameters such as doping and temperature. The dark current - voltage characteristics have been simulated and analyzed theoretically. Dark Current as low as I D=10 -10 was obtained at 78 K. For x=0.225, a peak detectivity of 1.558 × 10 11 mHz 1/2/W was obtained.
KW - Auger recombination
KW - HgCdTe
KW - Infrared Photodetectors
KW - OPTODET
UR - http://www.scopus.com/inward/record.url?scp=84858968969&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84858968969&partnerID=8YFLogxK
U2 - 10.1109/NANO.2011.6144311
DO - 10.1109/NANO.2011.6144311
M3 - Conference contribution
AN - SCOPUS:84858968969
SN - 9781457715143
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 554
EP - 558
BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Y2 - 15 August 2011 through 19 August 2011
ER -