Abstract

The tool OPTODET has been developed to investigate and explain the device characteristics of p +-n HgCdTe Photodetector at low temperatures. In this paper the performance of narrow band gap Hg 1-xCd xTe (x=0.225) at 78 K and wide band gap Hg 1-xCd xTe (x=0.3) at 250 K have been analyzed. Our theoretical model considers complete Fermi-Dirac statistics and all the major recombination mechanisms. The performance of the device has been studied and simulated as a function of parameters such as doping and temperature. The dark current - voltage characteristics have been simulated and analyzed theoretically. Dark Current as low as I D=10 -10 was obtained at 78 K. For x=0.225, a peak detectivity of 1.558 × 10 11 mHz 1/2/W was obtained.

Original languageEnglish (US)
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages554-558
Number of pages5
DOIs
StatePublished - Dec 1 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period8/15/118/19/11

Keywords

  • Auger recombination
  • HgCdTe
  • Infrared Photodetectors
  • OPTODET

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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  • Cite this

    Muralidharan, P., Wijewarnasuriya, P. S., & Vasileska, D. (2011). OPTODET - Tool to model LWIR and MWIR region for HgCdTe photodetectors. In 2011 11th IEEE International Conference on Nanotechnology, NANO 2011 (pp. 554-558). [6144311] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2011.6144311