Optimizing radiation hard by design SRAM cells

Lawrence T. Clark, Karl C. Mohr, Keith Holbert, Xiaoyin Yao, Jonathan Knudsen, Harshit Shah

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Various radiation hardened by design SRAM cells are explored for their size, electrical performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing on 130-and 90-nm transistors and SRAM arrays show that SRAM cells using two-edge transistors, NMOS access transistors, and NMOS reverse-body-bias effectively mitigate TID in both generations. This work experimentally demonstrates that commercial foundry (optimally sized) SRAM cells can be used in radiation hardening by design if NMOS reverse-body bias is used for TID mitigation.

Original languageEnglish (US)
Pages (from-to)2078-2086
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume54
Issue number6
DOIs
StatePublished - Dec 1 2007

Keywords

  • Integrated circuit radiation effects
  • Radiation hardening
  • SRAM

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Optimizing radiation hard by design SRAM cells'. Together they form a unique fingerprint.

  • Cite this

    Clark, L. T., Mohr, K. C., Holbert, K., Yao, X., Knudsen, J., & Shah, H. (2007). Optimizing radiation hard by design SRAM cells. IEEE Transactions on Nuclear Science, 54(6), 2078-2086. https://doi.org/10.1109/TNS.2007.909482