Abstract
Various radiation hardened by design SRAM cells are explored for their size, electrical performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing on 130-and 90-nm transistors and SRAM arrays show that SRAM cells using two-edge transistors, NMOS access transistors, and NMOS reverse-body-bias effectively mitigate TID in both generations. This work experimentally demonstrates that commercial foundry (optimally sized) SRAM cells can be used in radiation hardening by design if NMOS reverse-body bias is used for TID mitigation.
Original language | English (US) |
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Pages (from-to) | 2028-2036 |
Number of pages | 9 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 54 |
Issue number | 6 |
DOIs | |
State | Published - Dec 2007 |
Keywords
- Integrated circuit radiation effects
- Radiation hardening
- SRAM
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering