Optimizing radiation hard by design SRAM cells

Lawrence T. Clark, Karl C. Mohr, Keith Holbert, Xiaoyin Yao, Jonathan Knudsen, Harshit Shah

Research output: Contribution to journalArticle

36 Scopus citations


Various radiation hardened by design SRAM cells are explored for their size, electrical performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing on 130-and 90-nm transistors and SRAM arrays show that SRAM cells using two-edge transistors, NMOS access transistors, and NMOS reverse-body-bias effectively mitigate TID in both generations. This work experimentally demonstrates that commercial foundry (optimally sized) SRAM cells can be used in radiation hardening by design if NMOS reverse-body bias is used for TID mitigation.

Original languageEnglish (US)
Pages (from-to)2078-2086
Number of pages9
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1 2007


  • Integrated circuit radiation effects
  • Radiation hardening
  • SRAM

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Clark, L. T., Mohr, K. C., Holbert, K., Yao, X., Knudsen, J., & Shah, H. (2007). Optimizing radiation hard by design SRAM cells. IEEE Transactions on Nuclear Science, 54(6), 2078-2086. https://doi.org/10.1109/TNS.2007.909482