TY - JOUR
T1 - Optimizing diode thickness for thin-film solid state thermal neutron detectors
AU - Murphy, John W.
AU - Kunnen, George R.
AU - Mejia, Israel
AU - Quevedo-Lopez, Manuel A.
AU - Allee, David
AU - Gnade, Bruce
N1 - Funding Information:
We would like to acknowledge the support of the United States Department of Homeland Security and the National Science Foundation, Grant No. ECCS-11139986.
PY - 2012/10/1
Y1 - 2012/10/1
N2 - In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, 10B and 6LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.
AB - In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, 10B and 6LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.
UR - http://www.scopus.com/inward/record.url?scp=84867550226&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867550226&partnerID=8YFLogxK
U2 - 10.1063/1.4757292
DO - 10.1063/1.4757292
M3 - Article
AN - SCOPUS:84867550226
SN - 0003-6951
VL - 101
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 14
M1 - 143506
ER -