Optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Seung Hyun Kim, D. J. Kim, K. M. Lee, M. Park, A. I. Kingon, R. J. Nemanich, J. Im, S. K. Streiffer

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Original languageEnglish (US)
Pages (from-to)4395-4401
Number of pages7
JournalJournal of Materials Research
Volume14
Issue number11
DOIs
StatePublished - Nov 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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