Optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

Seung Hyun Kim; D. J. Kim; K. M. Lee; M. Park; A. I. Kingon; R. J. Nemanich; J. Im; S. K. Streiffer

doi:10.1557/JMR.1999.0594

Optimized process for fabrication of SrBi₂Ta₂O₉ thin films using a novel chemical solution deposition technique

Seung Hyun Kim, D. J. Kim, K. M. Lee, M. Park, A. I. Kingon, R. J. Nemanich, J. Im, S. K. Streiffer

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Ferroelectric SrBi₂Ta₂O₉ (SBT) thin films on Pt/ZrO₂/SiO₂/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 10¹⁰ switching cycles, indicating favorable behavior for memory applications.

Original language	English (US)
Pages (from-to)	4395-4401
Number of pages	7
Journal	Journal of Materials Research
Volume	14
Issue number	11
DOIs	https://doi.org/10.1557/JMR.1999.0594
State	Published - Nov 1999
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.1999.0594

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title = "Optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique",

abstract = "Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.",

author = "Kim, {Seung Hyun} and Kim, {D. J.} and Lee, {K. M.} and M. Park and Kingon, {A. I.} and Nemanich, {R. J.} and J. Im and Streiffer, {S. K.}",

year = "1999",

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volume = "14",

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T1 - Optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

AU - Kim, Seung Hyun

AU - Kim, D. J.

AU - Lee, K. M.

AU - Park, M.

AU - Kingon, A. I.

AU - Nemanich, R. J.

AU - Im, J.

AU - Streiffer, S. K.

PY - 1999/11

Y1 - 1999/11

N2 - Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

AB - Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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Optimized process for fabrication of SrBi₂Ta₂O₉ thin films using a novel chemical solution deposition technique

Abstract

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