Optimization of RRAM-based physical unclonable function with a novel differential read-out method

Yachuan Pang, Huaqiang Wu, Bin Gao, Ning Deng, Dong Wu, Rui Liu, Shimeng Yu, An Chen, He Qian

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

RRAM-based physical unclonable function (PUF) leveraging the remarkable resistance variability has been proposed and experimentally demonstrated on a 1-kb one-transistor one-resistor array. In this letter, a novel differential read-out method is utilized to reduce the effect of resistance window degradation. The RRAM PUF reliability is optimized through a reliability-enhancement design and oxide stack engineering. The experimental results show that the optimized RRAM PUF demonstrates nearly ideal uniqueness with the inter-chip Hamming distance close to 50%. The reliability of the optimized RRAM PUF is improved over the prior work. The intra-chip Hamming distance is close to the ideal value 0%, which can be sustained for a lifetime of more than ten years at 80 °C. This letter demonstrates that RRAM PUF has great potential for robust lightweight security solutions in IoT applications.

Original languageEnglish (US)
Article number7803618
Pages (from-to)168-171
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number2
DOIs
StatePublished - Feb 1 2017

Fingerprint

Hamming distance
Resistors
Oxides
Transistors
Hardware security
RRAM
Degradation
Internet of things

Keywords

  • 1T1R array
  • hardware security
  • PUF
  • reliability
  • RRAM
  • variability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Optimization of RRAM-based physical unclonable function with a novel differential read-out method. / Pang, Yachuan; Wu, Huaqiang; Gao, Bin; Deng, Ning; Wu, Dong; Liu, Rui; Yu, Shimeng; Chen, An; Qian, He.

In: IEEE Electron Device Letters, Vol. 38, No. 2, 7803618, 01.02.2017, p. 168-171.

Research output: Contribution to journalArticle

Pang, Y, Wu, H, Gao, B, Deng, N, Wu, D, Liu, R, Yu, S, Chen, A & Qian, H 2017, 'Optimization of RRAM-based physical unclonable function with a novel differential read-out method', IEEE Electron Device Letters, vol. 38, no. 2, 7803618, pp. 168-171. https://doi.org/10.1109/LED.2016.2647230
Pang, Yachuan ; Wu, Huaqiang ; Gao, Bin ; Deng, Ning ; Wu, Dong ; Liu, Rui ; Yu, Shimeng ; Chen, An ; Qian, He. / Optimization of RRAM-based physical unclonable function with a novel differential read-out method. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 2. pp. 168-171.
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