Optimization of RRAM-based physical unclonable function with a novel differential read-out method

Yachuan Pang, Huaqiang Wu, Bin Gao, Ning Deng, Dong Wu, Rui Liu, Shimeng Yu, An Chen, He Qian

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

RRAM-based physical unclonable function (PUF) leveraging the remarkable resistance variability has been proposed and experimentally demonstrated on a 1-kb one-transistor one-resistor array. In this letter, a novel differential read-out method is utilized to reduce the effect of resistance window degradation. The RRAM PUF reliability is optimized through a reliability-enhancement design and oxide stack engineering. The experimental results show that the optimized RRAM PUF demonstrates nearly ideal uniqueness with the inter-chip Hamming distance close to 50%. The reliability of the optimized RRAM PUF is improved over the prior work. The intra-chip Hamming distance is close to the ideal value 0%, which can be sustained for a lifetime of more than ten years at 80 °C. This letter demonstrates that RRAM PUF has great potential for robust lightweight security solutions in IoT applications.

Original languageEnglish (US)
Article number7803618
Pages (from-to)168-171
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number2
DOIs
StatePublished - Feb 1 2017

Keywords

  • 1T1R array
  • hardware security
  • PUF
  • reliability
  • RRAM
  • variability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Pang, Y., Wu, H., Gao, B., Deng, N., Wu, D., Liu, R., Yu, S., Chen, A., & Qian, H. (2017). Optimization of RRAM-based physical unclonable function with a novel differential read-out method. IEEE Electron Device Letters, 38(2), 168-171. [7803618]. https://doi.org/10.1109/LED.2016.2647230