Optimization of nanowire DNA sensor sensitivity using self-consistent simulation

S. Baumgartner, M. Vasicek, A. Bulyha, C. Heitzinger

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

In order to facilitate the rational design and the characterization of nanowire field-effect sensors, we have developed a model based on self-consistent charge-transport equations combined with interface conditions for the description of the biofunctionalized surface layer at the semiconductor/electrolyte interface. Crucial processes at the interface, such as the screening of the partial charges of the DNA strands and the influence of the angle of the DNA strands with respect to the nanowire, are computed by a Metropolis Monte Carlo algorithm for charged molecules at interfaces. In order to investigate the sensing mechanism of the device, we have computed the current-voltage characteristics, the electrostatic potential and the concentrations of electrons and holes. Very good agreement with measurements has been found and optimal device parameters have been identified. Our approach provides the capability to study the device sensitivity, which is of fundamental importance for reliable sensing.

Original languageEnglish (US)
Article number425503
JournalNanotechnology
Volume22
Issue number42
DOIs
StatePublished - Oct 21 2011
Externally publishedYes

Fingerprint

Nanowires
DNA
Sensors
Current voltage characteristics
Electrolytes
Charge transfer
Electrostatics
Screening
Semiconductor materials
Molecules
Electrons

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Optimization of nanowire DNA sensor sensitivity using self-consistent simulation. / Baumgartner, S.; Vasicek, M.; Bulyha, A.; Heitzinger, C.

In: Nanotechnology, Vol. 22, No. 42, 425503, 21.10.2011.

Research output: Contribution to journalArticle

Baumgartner, S. ; Vasicek, M. ; Bulyha, A. ; Heitzinger, C. / Optimization of nanowire DNA sensor sensitivity using self-consistent simulation. In: Nanotechnology. 2011 ; Vol. 22, No. 42.
@article{ead788a022e147a58e626d257da87352,
title = "Optimization of nanowire DNA sensor sensitivity using self-consistent simulation",
abstract = "In order to facilitate the rational design and the characterization of nanowire field-effect sensors, we have developed a model based on self-consistent charge-transport equations combined with interface conditions for the description of the biofunctionalized surface layer at the semiconductor/electrolyte interface. Crucial processes at the interface, such as the screening of the partial charges of the DNA strands and the influence of the angle of the DNA strands with respect to the nanowire, are computed by a Metropolis Monte Carlo algorithm for charged molecules at interfaces. In order to investigate the sensing mechanism of the device, we have computed the current-voltage characteristics, the electrostatic potential and the concentrations of electrons and holes. Very good agreement with measurements has been found and optimal device parameters have been identified. Our approach provides the capability to study the device sensitivity, which is of fundamental importance for reliable sensing.",
author = "S. Baumgartner and M. Vasicek and A. Bulyha and C. Heitzinger",
year = "2011",
month = "10",
day = "21",
doi = "10.1088/0957-4484/22/42/425503",
language = "English (US)",
volume = "22",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "42",

}

TY - JOUR

T1 - Optimization of nanowire DNA sensor sensitivity using self-consistent simulation

AU - Baumgartner, S.

AU - Vasicek, M.

AU - Bulyha, A.

AU - Heitzinger, C.

PY - 2011/10/21

Y1 - 2011/10/21

N2 - In order to facilitate the rational design and the characterization of nanowire field-effect sensors, we have developed a model based on self-consistent charge-transport equations combined with interface conditions for the description of the biofunctionalized surface layer at the semiconductor/electrolyte interface. Crucial processes at the interface, such as the screening of the partial charges of the DNA strands and the influence of the angle of the DNA strands with respect to the nanowire, are computed by a Metropolis Monte Carlo algorithm for charged molecules at interfaces. In order to investigate the sensing mechanism of the device, we have computed the current-voltage characteristics, the electrostatic potential and the concentrations of electrons and holes. Very good agreement with measurements has been found and optimal device parameters have been identified. Our approach provides the capability to study the device sensitivity, which is of fundamental importance for reliable sensing.

AB - In order to facilitate the rational design and the characterization of nanowire field-effect sensors, we have developed a model based on self-consistent charge-transport equations combined with interface conditions for the description of the biofunctionalized surface layer at the semiconductor/electrolyte interface. Crucial processes at the interface, such as the screening of the partial charges of the DNA strands and the influence of the angle of the DNA strands with respect to the nanowire, are computed by a Metropolis Monte Carlo algorithm for charged molecules at interfaces. In order to investigate the sensing mechanism of the device, we have computed the current-voltage characteristics, the electrostatic potential and the concentrations of electrons and holes. Very good agreement with measurements has been found and optimal device parameters have been identified. Our approach provides the capability to study the device sensitivity, which is of fundamental importance for reliable sensing.

UR - http://www.scopus.com/inward/record.url?scp=80053276051&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053276051&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/22/42/425503

DO - 10.1088/0957-4484/22/42/425503

M3 - Article

C2 - 21945993

AN - SCOPUS:80053276051

VL - 22

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 42

M1 - 425503

ER -