Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

Engineering & Materials Science

• Quantum cascade lasers 100%
• Metallorganic chemical vapor deposition 87%
• Threshold current density 53%
• Growth temperature 44%
• Semiconductor quantum wells 43%
• Epitaxial films 42%
• Substrates 39%
• Surface morphology 31%
• Contamination 26%
• Impurities 26%
• Wavelength 24%
• Oxygen 22%
• Carbon 20%
• Temperature 11%

Chemical Compounds

• Epitaxial Film 79%
• Emission Wavelength 60%
• Chemical Vapour Deposition 49%
• Current Density 40%
• Ambient Reaction Temperature 30%
• Dioxygen 27%
• Carbon Atom 26%
• Surface 17%

Physics & Astronomy

• quantum cascade lasers 61%
• metalorganic chemical vapor deposition 52%
• optimization 36%
• threshold currents 19%
• contamination 16%
• quantum wells 14%
• slopes 13%
• current density 13%
• carbon 12%
• impurities 12%
• oxygen 11%
• room temperature 10%
• wavelengths 8%
• temperature 5%