TY - JOUR
T1 - Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition
AU - Huang, Yong
AU - Ryou, Jae Hyun
AU - Dupuis, Russell D.
AU - Pflgl, Christian
AU - Capasso, Federico
AU - Sun, Kewei
AU - Fischer, Alec M.
AU - Ponce, Fernando
N1 - Funding Information:
This work was performed in part at the Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by the National Science Foundation under NSF award no. ECS-0335765 . CNS is part of the Faculty of Arts and Sciences at Harvard University. Authors would like to acknowledge useful technical discussions with Dr. Christine Wang of MIT Lincoln Lab. One of the authors (R.D.D) acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics and The Georgia Research Alliance.
PY - 2011/2/1
Y1 - 2011/2/1
N2 - We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of substrate misorientation, growth temperature, and V/III ratios of InGaAs and InAlAs layers on the surface morphology, optical quality, and impurity incorporation were systematically studied. It was found that epitaxial layers and multi-quantum-well structures grown at 720 °C with V/III ratios of 116 for InGaAs and 21 for InAlAs on InP substrates with an off-cut angle of ∼0.06° exhibit a stable step-flow growth and low oxygen and carbon contamination. Using these conditions, a ∼11.3-μm-thick QCL with an emission wavelength at ∼9.2 μm was grown and fabricated, which demonstrated excellent structural quality and operated at room temperature in pulsed mode with a threshold current density of 2.0 kA/cm2 and a slope efficiency of 550 mW/A.
AB - We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of substrate misorientation, growth temperature, and V/III ratios of InGaAs and InAlAs layers on the surface morphology, optical quality, and impurity incorporation were systematically studied. It was found that epitaxial layers and multi-quantum-well structures grown at 720 °C with V/III ratios of 116 for InGaAs and 21 for InAlAs on InP substrates with an off-cut angle of ∼0.06° exhibit a stable step-flow growth and low oxygen and carbon contamination. Using these conditions, a ∼11.3-μm-thick QCL with an emission wavelength at ∼9.2 μm was grown and fabricated, which demonstrated excellent structural quality and operated at room temperature in pulsed mode with a threshold current density of 2.0 kA/cm2 and a slope efficiency of 550 mW/A.
KW - A1. Characterization
KW - A3. Metalorganic chemical vapor deposition
KW - B2. Semiconducting IIIV materials
KW - B3. Infrared devices
KW - B3. Laser diodes
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U2 - 10.1016/j.jcrysgro.2010.12.028
DO - 10.1016/j.jcrysgro.2010.12.028
M3 - Article
AN - SCOPUS:79551685897
SN - 0022-0248
VL - 316
SP - 75
EP - 80
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -