Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition

Yong Huang, Jae Hyun Ryou, Russell D. Dupuis, Christian Pflgl, Federico Capasso, Kewei Sun, Alec M. Fischer, Fernando Ponce

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of substrate misorientation, growth temperature, and V/III ratios of InGaAs and InAlAs layers on the surface morphology, optical quality, and impurity incorporation were systematically studied. It was found that epitaxial layers and multi-quantum-well structures grown at 720 °C with V/III ratios of 116 for InGaAs and 21 for InAlAs on InP substrates with an off-cut angle of ∼0.06° exhibit a stable step-flow growth and low oxygen and carbon contamination. Using these conditions, a ∼11.3-μm-thick QCL with an emission wavelength at ∼9.2 μm was grown and fabricated, which demonstrated excellent structural quality and operated at room temperature in pulsed mode with a threshold current density of 2.0 kA/cm2 and a slope efficiency of 550 mW/A.

Original languageEnglish (US)
Pages (from-to)75-80
Number of pages6
JournalJournal of Crystal Growth
Volume316
Issue number1
DOIs
StatePublished - Feb 1 2011

Keywords

  • A1. Characterization
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting IIIV materials
  • B3. Infrared devices
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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