Optimization of boron groove diffusion for double sided buried contact silicon solar cells

A. U. Ebong, S. H. Lee, Christiana Honsberg, S. R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

The double sided buried contact (DSBC) silicon solar cell is very sensitive to boron diffusion into the rear grooves. This dependence is due to the rear floating junction and the effect of boron on the minority carrier lifetime of a device. To compensate for the rear junction without the deleterious effect of boron on the device performance, three different boron diffusion conditions were investigated. These are, light (113-136 Ω/□), medium (45-72 Ω/□), and heavy (14-41 Ω/□). Each condition corresponds to a different set of electrical output parameters, especially the open circuit voltage, fill factor and the ideality factor. The medium condition has been found to give the best open circuit voltage (671 mV) and fill factor of greater than 0.76. This paper discusses the experimental work done on boron rear groove diffusion and the corresponding results.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages513-516
Number of pages4
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: May 13 1996May 17 1996

Other

OtherProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
CityWashington, DC, USA
Period5/13/965/17/96

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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  • Cite this

    Ebong, A. U., Lee, S. H., Honsberg, C., & Wenham, S. R. (1996). Optimization of boron groove diffusion for double sided buried contact silicon solar cells. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 513-516). IEEE.