Optimisation of boron rear diffusion in buried contact solar cells

Alexander M. Slade, Christiana Honsberg, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 & 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages414-417
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
StatePublished - 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

Fingerprint

Boron
Solar cells
Open circuit voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Slade, A. M., Honsberg, C., & Wenham, S. R. (2000). Optimisation of boron rear diffusion in buried contact solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 414-417). [915856] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915856

Optimisation of boron rear diffusion in buried contact solar cells. / Slade, Alexander M.; Honsberg, Christiana; Wenham, Stuart R.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 414-417 915856.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Slade, AM, Honsberg, C & Wenham, SR 2000, Optimisation of boron rear diffusion in buried contact solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 915856, Institute of Electrical and Electronics Engineers Inc., pp. 414-417, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.915856
Slade AM, Honsberg C, Wenham SR. Optimisation of boron rear diffusion in buried contact solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 414-417. 915856 https://doi.org/10.1109/PVSC.2000.915856
Slade, Alexander M. ; Honsberg, Christiana ; Wenham, Stuart R. / Optimisation of boron rear diffusion in buried contact solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 414-417
@inproceedings{2069fd8c0d14467dbeb7c58588c4e18a,
title = "Optimisation of boron rear diffusion in buried contact solar cells",
abstract = "Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 & 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.",
author = "Slade, {Alexander M.} and Christiana Honsberg and Wenham, {Stuart R.}",
year = "2000",
doi = "10.1109/PVSC.2000.915856",
language = "English (US)",
isbn = "0780357728",
volume = "2000-January",
pages = "414--417",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Optimisation of boron rear diffusion in buried contact solar cells

AU - Slade, Alexander M.

AU - Honsberg, Christiana

AU - Wenham, Stuart R.

PY - 2000

Y1 - 2000

N2 - Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 & 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.

AB - Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 & 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.

UR - http://www.scopus.com/inward/record.url?scp=84879696825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879696825&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2000.915856

DO - 10.1109/PVSC.2000.915856

M3 - Conference contribution

SN - 0780357728

VL - 2000-January

SP - 414

EP - 417

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -