Optimisation of boron rear diffusion in buried contact solar cells

Alexander M. Slade; Christiana B. Honsberg; Stuart R. Wenham

doi:10.1109/PVSC.2000.915856

Optimisation of boron rear diffusion in buried contact solar cells

Alexander M. Slade, Christiana B. Honsberg, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Scopus citations

Abstract

Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 and 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	414-417
Number of pages	4
ISBN (Electronic)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.915856
State	Published - Jan 1 2000
Externally published	Yes

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2000.915856

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title = "Optimisation of boron rear diffusion in buried contact solar cells",

abstract = "Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 and 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.",

author = "Slade, {Alexander M.} and Honsberg, {Christiana B.} and Wenham, {Stuart R.}",

year = "2000",

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doi = "10.1109/PVSC.2000.915856",

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T1 - Optimisation of boron rear diffusion in buried contact solar cells

AU - Slade, Alexander M.

AU - Honsberg, Christiana B.

AU - Wenham, Stuart R.

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N2 - Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 and 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.

AB - Boron diffused rear surfaces are used in place of an Al/Si alloy to form a back surface field (BSF) for single sided buried contact (SSBC) cells. This was done as part of an investigation to determine the effect that heavy boron diffusions have on lifetime and saturation current. The findings are that a heavy boron diffusion over a large area can increase efficiency, since the bulk lifetime is retained and low saturation current is observed. SSBC solar cells were made that had open circuit voltages of 650 mV, 645 mV, and 640 mV on 3 and 10 Ωcm p-type, and 100 Ωcm (rear junction) n-type, respectively, using a heavily boron diffused region.

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ER -

Optimisation of boron rear diffusion in buried contact solar cells

Abstract

ASJC Scopus subject areas

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