Optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors

B. Laikhtman, Richard Kiehl, D. J. Frank

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using the model of an infinite well we have performed detailed calculations of the hole band structure in a strained quantum well. In-plane effective masses and energy separations were calculated for different thicknesses of the well and In mole fractions below 0.50. Based on the calculations we estimated the optimal thickness of the well and In mole fraction for which the energy separation between the lowest two subbands has a maximum and the InGaAs layer is stable with respect to misfit dislocations. The results provide useful guidelines for the optimization of p-channel field-effect transistors.

Original languageEnglish (US)
Pages (from-to)1667-1669
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number15
DOIs
StatePublished - 1991
Externally publishedYes

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aluminum gallium arsenides
field effect transistors
quantum wells
optimization
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors. / Laikhtman, B.; Kiehl, Richard; Frank, D. J.

In: Applied Physics Letters, Vol. 58, No. 15, 1991, p. 1667-1669.

Research output: Contribution to journalArticle

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