Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

Kristina Driscoll; Yitao Liao; Anirban Bhattacharyya; Lin Zhou; David Smith; Theodore D. Moustakas; Roberto Paiella

doi:10.1063/1.3089840

Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David Smith, Theodore D. Moustakas, Roberto Paiella

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45 Scopus citations

Abstract

Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 μm with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.

Original language	English (US)
Article number	081120
Journal	Applied Physics Letters
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.3089840
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{703535591da4404dadc225f7971cf554,

title = "Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells",

abstract = "Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 μm with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.",

author = "Kristina Driscoll and Yitao Liao and Anirban Bhattacharyya and Lin Zhou and David Smith and Moustakas, {Theodore D.} and Roberto Paiella",

note = "Funding Information: This work was supported by the National Science Foundation under Grant No. ECS-0622102. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. ",

year = "2009",

doi = "10.1063/1.3089840",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

AU - Driscoll, Kristina

AU - Liao, Yitao

AU - Bhattacharyya, Anirban

AU - Zhou, Lin

AU - Smith, David

AU - Moustakas, Theodore D.

AU - Paiella, Roberto

N1 - Funding Information: This work was supported by the National Science Foundation under Grant No. ECS-0622102. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2009

Y1 - 2009

N2 - Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 μm with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.

AB - Optically pumped pulsed emission of short-wave infrared radiation based on intersubband transitions in GaN/AlN quantum wells is demonstrated. Nanosecond-scale pump pulses are used to resonantly excite electrons from the ground states to the second-excited subbands, followed by radiative relaxation into the first-excited subbands. The measured room-temperature output spectra are peaked near 2 μm with integrated powers of a few hundred nanowatts. The intersubband origin of the measured luminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence, as well as simulations of the quantum well subband structure.

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DO - 10.1063/1.3089840

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JF - Applied Physics Letters

IS - 8

M1 - 081120

ER -

Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

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