Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates

Yuh Shiuan Liu; Zachary Lochner; Tsung Ting Kao; Md Mahbub Satter; Xiao Hang Li; Jae Hyun Ryou; Shyh Chiang Shen; P. Douglas Yoder; Theeradetch Detchprohm; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando Ponce

doi:10.1002/pssc.201300213

Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates

Yuh Shiuan Liu, Zachary Lochner, Tsung Ting Kao, Md Mahbub Satter, Xiao Hang Li, Jae Hyun Ryou, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi-quantum-well heterostructures in an Aixtron 6 × 2″ close-coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm² and 297 kW/cm², respectively. Both laser bars showed transverse electric-polarization-dominated optical emission when operating above threshold.

Original language	English (US)
Pages (from-to)	258-260
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	11
Issue number	2
DOIs	https://doi.org/10.1002/pssc.201300213
State	Published - Feb 2014

Keywords

AlGaN
III-nitride semiconductors
Lasers
MOCVD
Metalorganic chemical vapor deposition

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201300213

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Liu, Y. S., Lochner, Z., Kao, T. T., Satter, M. M., Li, X. H., Ryou, J. H., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A., & Ponce, F. (2014). Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates. Physica Status Solidi (C) Current Topics in Solid State Physics, 11(2), 258-260. https://doi.org/10.1002/pssc.201300213

Liu, YS, Lochner, Z, Kao, TT, Satter, MM, Li, XH, Ryou, JH, Shen, SC, Yoder, PD, Detchprohm, T, Dupuis, RD, Wei, Y, Xie, H, Fischer, A & Ponce, F 2014, 'Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 11, no. 2, pp. 258-260. https://doi.org/10.1002/pssc.201300213

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title = "Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates",

abstract = "In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi-quantum-well heterostructures in an Aixtron 6 × 2″ close-coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm2 and 297 kW/cm2, respectively. Both laser bars showed transverse electric-polarization-dominated optical emission when operating above threshold.",

keywords = "AlGaN, III-nitride semiconductors, Lasers, MOCVD, Metalorganic chemical vapor deposition",

author = "Liu, {Yuh Shiuan} and Zachary Lochner and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Li, {Xiao Hang} and Ryou, {Jae Hyun} and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Theeradetch Detchprohm and Dupuis, {Russell D.} and Yong Wei and Hongen Xie and Alec Fischer and Fernando Ponce",

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doi = "10.1002/pssc.201300213",

language = "English (US)",

volume = "11",

pages = "258--260",

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AU - Liu, Yuh Shiuan

AU - Lochner, Zachary

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Li, Xiao Hang

AU - Ryou, Jae Hyun

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando

PY - 2014/2

Y1 - 2014/2

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AB - In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi-quantum-well heterostructures in an Aixtron 6 × 2″ close-coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm2 and 297 kW/cm2, respectively. Both laser bars showed transverse electric-polarization-dominated optical emission when operating above threshold.

KW - AlGaN

KW - III-nitride semiconductors

KW - Lasers

KW - MOCVD

KW - Metalorganic chemical vapor deposition

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Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates

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Keywords

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