Abstract

Carrier recombination lifetime measurements have always been a challenging task when performed on epitaxial layers. This is due to the fact that most techniques determine the lifetime value by measuring the minority carriers' diffusion length. We will present a new method for measuring the lifetime parameter using light excitation on a MOS-capacitor that is biased into heavy inversion. The annihilation of the optically generated carriers under the shield of an existing depletion region simplifies the mathematical analysis. We show that our proposed approach, corroborated by experimental results, is capable of monitoring lifetime variations due to the presence of metallic impurities as low as 1010cm-3.

Original languageEnglish (US)
Article number6878420
Pages (from-to)986-988
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number10
DOIs
StatePublished - Oct 1 2014

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MOS capacitors
Epitaxial layers
Capacitors
Impurities
Monitoring

Keywords

  • Carrier lifetimes
  • Epitaxial layers
  • Mos capacitors
  • Semiconductor defects
  • Semiconductor device measurements
  • Semiconductor materials
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Optically excited mos-capacitor for recombination lifetime measurement. / Khorasani, Arash Elhami; Schroder, Dieter K.; Alford, Terry.

In: IEEE Electron Device Letters, Vol. 35, No. 10, 6878420, 01.10.2014, p. 986-988.

Research output: Contribution to journalArticle

Khorasani, Arash Elhami ; Schroder, Dieter K. ; Alford, Terry. / Optically excited mos-capacitor for recombination lifetime measurement. In: IEEE Electron Device Letters. 2014 ; Vol. 35, No. 10. pp. 986-988.
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