Optically addressed near and long-wave infrared multiband photodetectors

O. O. Cellek; J. L. Reno; Yong-Hang Zhang

doi:10.1063/1.4729004

Optically addressed near and long-wave infrared multiband photodetectors

O. O. Cellek, J. L. Reno, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength near-infrared (NIR) AlGaAs/GaAs p-i-n photodetector and a 8.2 μm peak wavelength long-wave infrared (LWIR) AlGaAs/GaAs quantum well infrared photodetector on GaAs substrate is fabricated and characterized. Switching between NIR and LWIR bands is demonstrated by using external light bias. The dual-band photodetector gives 65% quantum efficiency in NIR band and specific detectivity of 2 × 10 ⁹ cm Hz ^1/2/W in LWIR band at 68 K. Spectral crosstalk is better than 25 dB. These devices enable the use of only a single indium-bump per pixel for multiband image sensor arrays to have maximum fill factor.

Original language	English (US)
Article number	241103
Journal	Applied Physics Letters
Volume	100
Issue number	24
DOIs	https://doi.org/10.1063/1.4729004
State	Published - Jun 11 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4729004

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@article{8ece98b9e1c04ce19fe6d95a8a247ef0,

title = "Optically addressed near and long-wave infrared multiband photodetectors",

abstract = "Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength near-infrared (NIR) AlGaAs/GaAs p-i-n photodetector and a 8.2 μm peak wavelength long-wave infrared (LWIR) AlGaAs/GaAs quantum well infrared photodetector on GaAs substrate is fabricated and characterized. Switching between NIR and LWIR bands is demonstrated by using external light bias. The dual-band photodetector gives 65% quantum efficiency in NIR band and specific detectivity of 2 × 10 9 cm Hz 1/2/W in LWIR band at 68 K. Spectral crosstalk is better than 25 dB. These devices enable the use of only a single indium-bump per pixel for multiband image sensor arrays to have maximum fill factor.",

author = "Cellek, {O. O.} and Reno, {J. L.} and Yong-Hang Zhang",

note = "Funding Information: This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under contract DE-AC04-94AL85000. O.O.C. and Y.H.Z. also acknowledge funding by the AFOSR under Grant No. FA9550-10-1-0129.",

year = "2012",

month = jun,

day = "11",

doi = "10.1063/1.4729004",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

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T1 - Optically addressed near and long-wave infrared multiband photodetectors

AU - Cellek, O. O.

AU - Reno, J. L.

AU - Zhang, Yong-Hang

N1 - Funding Information: This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-AC04-94AL85000. O.O.C. and Y.H.Z. also acknowledge funding by the AFOSR under Grant No. FA9550-10-1-0129.

PY - 2012/6/11

Y1 - 2012/6/11

N2 - Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength near-infrared (NIR) AlGaAs/GaAs p-i-n photodetector and a 8.2 μm peak wavelength long-wave infrared (LWIR) AlGaAs/GaAs quantum well infrared photodetector on GaAs substrate is fabricated and characterized. Switching between NIR and LWIR bands is demonstrated by using external light bias. The dual-band photodetector gives 65% quantum efficiency in NIR band and specific detectivity of 2 × 10 9 cm Hz 1/2/W in LWIR band at 68 K. Spectral crosstalk is better than 25 dB. These devices enable the use of only a single indium-bump per pixel for multiband image sensor arrays to have maximum fill factor.

AB - Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength near-infrared (NIR) AlGaAs/GaAs p-i-n photodetector and a 8.2 μm peak wavelength long-wave infrared (LWIR) AlGaAs/GaAs quantum well infrared photodetector on GaAs substrate is fabricated and characterized. Switching between NIR and LWIR bands is demonstrated by using external light bias. The dual-band photodetector gives 65% quantum efficiency in NIR band and specific detectivity of 2 × 10 9 cm Hz 1/2/W in LWIR band at 68 K. Spectral crosstalk is better than 25 dB. These devices enable the use of only a single indium-bump per pixel for multiband image sensor arrays to have maximum fill factor.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

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ER -

Optically addressed near and long-wave infrared multiband photodetectors

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