Abstract

Optically addressed dual-band photodetector incorporating of a 0.82 μm cut-off wavelength near-infrared (NIR) AlGaAs/GaAs p-i-n photodetector and a 8.2 μm peak wavelength long-wave infrared (LWIR) AlGaAs/GaAs quantum well infrared photodetector on GaAs substrate is fabricated and characterized. Switching between NIR and LWIR bands is demonstrated by using external light bias. The dual-band photodetector gives 65% quantum efficiency in NIR band and specific detectivity of 2 × 10 9 cm Hz 1/2/W in LWIR band at 68 K. Spectral crosstalk is better than 25 dB. These devices enable the use of only a single indium-bump per pixel for multiband image sensor arrays to have maximum fill factor.

Original languageEnglish (US)
Article number241103
JournalApplied Physics Letters
Volume100
Issue number24
DOIs
Publication statusPublished - Jun 11 2012

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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