Abstract

Multiband infrared focal plane arrays (FPAs) with small pixel pitch have increased device processing complexity since they often need more than two terminals per pixel for readouts. Simpler FPAs are enabled by our newly demonstrated optically-addressed two-terminal multiband photodetector architecture. For long-wavelength infrared (LWIR) and midwavelength infrared (MWIR) imaging applications, the use of quantum well infrared photodetectors (QWIP) has been investigated. The results show that the utilization of unipolar QWIPs with bipolar near infrared (NIR) devices is feasible with this new optical-addressing scheme. Potential device performance is analyzed with an equivalent AC circuit model. Proposed design maximizes fill factor and enables small pixel-pitch FPA with single indium-bump per pixel for NIR/MWIR/LWIR multiband detection capability.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8268
DOIs
StatePublished - 2012
EventQuantum Sensing and Nanophotonic Devices IX - San Francisco, CA, United States
Duration: Jan 22 2012Jan 26 2012

Other

OtherQuantum Sensing and Nanophotonic Devices IX
CountryUnited States
CitySan Francisco, CA
Period1/22/121/26/12

Fingerprint

Infrared Imaging
Photodetector
Infrared imaging
Photodetectors
photometers
focal plane devices
Infrared
pixels
Focal plane arrays
Infrared radiation
quantum well infrared photodetectors
Pixels
Pixel
Focal Plane
Infrared devices
Quantum well infrared photodetectors
Wavelength
Indium
wavelengths
indium

Keywords

  • FPA
  • multiband photodetector
  • Multicolor photodetector
  • multispectral imaging

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Cellek, O. O., & Zhang, Y-H. (2012). Optically addressed multiband photodetector for infrared imaging applications. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8268). [82682N] https://doi.org/10.1117/12.909063

Optically addressed multiband photodetector for infrared imaging applications. / Cellek, O. O.; Zhang, Yong-Hang.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8268 2012. 82682N.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cellek, OO & Zhang, Y-H 2012, Optically addressed multiband photodetector for infrared imaging applications. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8268, 82682N, Quantum Sensing and Nanophotonic Devices IX, San Francisco, CA, United States, 1/22/12. https://doi.org/10.1117/12.909063
Cellek OO, Zhang Y-H. Optically addressed multiband photodetector for infrared imaging applications. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8268. 2012. 82682N https://doi.org/10.1117/12.909063
Cellek, O. O. ; Zhang, Yong-Hang. / Optically addressed multiband photodetector for infrared imaging applications. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8268 2012.
@inproceedings{32ef004e60164109856313d629f84add,
title = "Optically addressed multiband photodetector for infrared imaging applications",
abstract = "Multiband infrared focal plane arrays (FPAs) with small pixel pitch have increased device processing complexity since they often need more than two terminals per pixel for readouts. Simpler FPAs are enabled by our newly demonstrated optically-addressed two-terminal multiband photodetector architecture. For long-wavelength infrared (LWIR) and midwavelength infrared (MWIR) imaging applications, the use of quantum well infrared photodetectors (QWIP) has been investigated. The results show that the utilization of unipolar QWIPs with bipolar near infrared (NIR) devices is feasible with this new optical-addressing scheme. Potential device performance is analyzed with an equivalent AC circuit model. Proposed design maximizes fill factor and enables small pixel-pitch FPA with single indium-bump per pixel for NIR/MWIR/LWIR multiband detection capability.",
keywords = "FPA, multiband photodetector, Multicolor photodetector, multispectral imaging",
author = "Cellek, {O. O.} and Yong-Hang Zhang",
year = "2012",
doi = "10.1117/12.909063",
language = "English (US)",
isbn = "9780819489111",
volume = "8268",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Optically addressed multiband photodetector for infrared imaging applications

AU - Cellek, O. O.

AU - Zhang, Yong-Hang

PY - 2012

Y1 - 2012

N2 - Multiband infrared focal plane arrays (FPAs) with small pixel pitch have increased device processing complexity since they often need more than two terminals per pixel for readouts. Simpler FPAs are enabled by our newly demonstrated optically-addressed two-terminal multiband photodetector architecture. For long-wavelength infrared (LWIR) and midwavelength infrared (MWIR) imaging applications, the use of quantum well infrared photodetectors (QWIP) has been investigated. The results show that the utilization of unipolar QWIPs with bipolar near infrared (NIR) devices is feasible with this new optical-addressing scheme. Potential device performance is analyzed with an equivalent AC circuit model. Proposed design maximizes fill factor and enables small pixel-pitch FPA with single indium-bump per pixel for NIR/MWIR/LWIR multiband detection capability.

AB - Multiband infrared focal plane arrays (FPAs) with small pixel pitch have increased device processing complexity since they often need more than two terminals per pixel for readouts. Simpler FPAs are enabled by our newly demonstrated optically-addressed two-terminal multiband photodetector architecture. For long-wavelength infrared (LWIR) and midwavelength infrared (MWIR) imaging applications, the use of quantum well infrared photodetectors (QWIP) has been investigated. The results show that the utilization of unipolar QWIPs with bipolar near infrared (NIR) devices is feasible with this new optical-addressing scheme. Potential device performance is analyzed with an equivalent AC circuit model. Proposed design maximizes fill factor and enables small pixel-pitch FPA with single indium-bump per pixel for NIR/MWIR/LWIR multiband detection capability.

KW - FPA

KW - multiband photodetector

KW - Multicolor photodetector

KW - multispectral imaging

UR - http://www.scopus.com/inward/record.url?scp=84863145018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863145018&partnerID=8YFLogxK

U2 - 10.1117/12.909063

DO - 10.1117/12.909063

M3 - Conference contribution

AN - SCOPUS:84863145018

SN - 9780819489111

VL - 8268

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -