Optical study on the coupled GaAsSb/GaAs double quantum wells

D. S. Jiang, X. G. Liang, K. Chang, L. F. Bian, B. Q. Sun, J. B. Wang, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.

Original languageEnglish (US)
Title of host publicationConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages255-258
Number of pages4
Volume2002-January
ISBN (Print)0780375718
DOIs
StatePublished - 2002
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
Duration: Dec 11 2002Dec 13 2002

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
CountryAustralia
CitySydney
Period12/11/0212/13/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Jiang, D. S., Liang, X. G., Chang, K., Bian, L. F., Sun, B. Q., Wang, J. B., Johnson, S., & Zhang, Y-H. (2002). Optical study on the coupled GaAsSb/GaAs double quantum wells. In Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD (Vol. 2002-January, pp. 255-258). [1237240] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237240