Optical studies of high-field carrier transport of InN thick film grown on GaN

Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff

Research output: Contribution to journalArticle

4 Scopus citations


Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

Original languageEnglish (US)
Pages (from-to)289-293
Number of pages5
JournalJournal of Crystal Growth
Issue number2
StatePublished - Mar 1 2006



  • A1. Carrier transport
  • A3. Raman spectroscopy
  • B1. InN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this