Optical studies of high-field carrier transport of InN thick film grown on GaN

Kong-Thon Tsen; C. Poweleit; D. K. Ferry; Hai Lu; William J. Schaff

doi:10.1016/j.jcrysgro.2005.12.009

Optical studies of high-field carrier transport of InN thick film grown on GaN

Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

Original language	English (US)
Pages (from-to)	289-293
Number of pages	5
Journal	Journal of Crystal Growth
Volume	288
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.009
State	Published - Mar 1 2006

Keywords

A1. Carrier transport
A3. Raman spectroscopy
B1. InN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2005.12.009

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title = "Optical studies of high-field carrier transport of InN thick film grown on GaN",

abstract = "Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.",

keywords = "A1. Carrier transport, A3. Raman spectroscopy, B1. InN",

author = "Kong-Thon Tsen and C. Poweleit and Ferry, {D. K.} and Hai Lu and Schaff, {William J.}",

note = "Funding Information: This work is supported by the National Science Foundation under Grant no: DMR-0305147, and the Office of Naval Research. The work at Cornell University is supported by ONR contract no. N000149910936 monitored by Dr. Colin Wood and a LBNL subcontract no. 6703635. These authors also acknowledge the technical assistance from Mark Little and Troy Richardson.",

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T1 - Optical studies of high-field carrier transport of InN thick film grown on GaN

AU - Tsen, Kong-Thon

AU - Poweleit, C.

AU - Ferry, D. K.

AU - Lu, Hai

AU - Schaff, William J.

N1 - Funding Information: This work is supported by the National Science Foundation under Grant no: DMR-0305147, and the Office of Naval Research. The work at Cornell University is supported by ONR contract no. N000149910936 monitored by Dr. Colin Wood and a LBNL subcontract no. 6703635. These authors also acknowledge the technical assistance from Mark Little and Troy Richardson.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

AB - Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III-V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.

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KW - A3. Raman spectroscopy

KW - B1. InN

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Optical studies of high-field carrier transport of InN thick film grown on GaN

Abstract

Keywords

ASJC Scopus subject areas

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